BDY23 – 180T2 BDY24 – 181T2 BDY25 – 182T2 NPN SILICON TRANSISTORS, DIFFUSED MESA They are NPN transistors mounted in Jedec TO-3. LF Large Signal Power Amplification. High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PTOT TJ TS Power Dissipation Junction Temperature Storage Temperature Value BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 @ TC = 25° 60 90 140 60 100 200 Unit V V 10 V 6 A 3 A 87.5 Watts -65 to +200 °C Value Unit 2 °C/W THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 31/10/2012 COMSET SEMICONDUCTORS 1|3 BDY23 – 180T2 BDY24 – 181T2 BDY25 – 182T2 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) ICEO IEBO ICES VCE(SAT) V(BR)CBO VBE(SAT) h21E fT t d + tr t s + tf Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) IC=50 mA IB=0 Collector-Emitter Cutoff Current VCE=60 V VCE=90 V VCE=140 V Emitter-Base Cutoff Current VEB=10 V Collector-Emitter Cutoff Current VCE=60 V VBE=0 V VCE=100 V VBE=0 V VCE=180 V VBE=0 V IC=2.0 A, IB=0.25 A Min Typ Max Unit BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23 BDY24 BDY25 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 60 80 140 - - - V 1.0 mA - - 1.0 mA BDY23, 180T2 - - 0.5 BDY24, 181T2 - - 1.0 BDY25, 182T2 - - 1.0 60 100 200 15 30 75 10 - 55 65 90 20 45 82 0.3 0.3 1 0.6 0.6 2.0 1.2 1.2 45 90 100 0.5 0.5 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 Collector-Base IC=3 mA BDY24, 181T2 Breakdown Voltage (*) BDY25, 182T2 BDY23, 180T2 IC=2.0 A, BDY24, 181T2 Base-Emitter Voltage (*) IB=0.25 A BDY25, 182T2 A VCE=4 V B IC=1 A C Static Forward Current transfer ratio (*) A VCE=4 V B IC=2 A C Transition Frequency VCE=15 V, IC=0.5 A, f=10 MHz Turn-on time IC=5 A, IB=1 A Turn-off time IC=5 A, IB1=1 A, IB2=-0.5 A Collector-Emitter saturation Voltage (*) (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 31/10/2012 COMSET SEMICONDUCTORS 2|3 mA V V V - MHz µs µs BDY23 – 180T2 BDY24 – 181T2 BDY25 – 182T2 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 Pin 1 : Pin 2 : Case : max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 31/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3