NPN 2N6055 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6055 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary PNP types are 2N6053. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB PT TJ Ts Ratings Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation Junction Storage Temperature IE=0 IB=0 IC=0 2N6055 2N6055 @ TC < 25° Value Unit 60 60 5.0 8 16 120 100 200 -65 to +200 V V V A A mA W Value Unit 1.17 °C/W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 17/10/2012 COMSET SEMICONDUCTORS 1|3 NPN 2N6055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEX ICEO IEBO VCEO(SUS) VCE(SAT) Ratings Collector Cutoff Current Test Condition(s) Typ MAx Unit VCE= VCEX =60 V, VBE=-1.5 V 2N6055 - - 500 µA VCE= VCEX =60 V, VBE=-1.5 V TC=150°C 2N6055 - - 5 mA 2N6055 - - 0.5 mA 2N6055 - - 2.0 mA 2N6055 60 - - V 2N6055 - - 2.0 Collector Cutoff VCE=30 Vdc, IB=0 Current Emitter Cutoff VEB=5 V Current Collector-Emitter Sustaining Voltage IC=0.1 A (*) Collector-Emitter saturation Voltage (*) Min IC=4 A, IB=16 mA V IC=8 A, IB=80 mA 2N6055 - - 3.0 VBE(SAT) Base-Emitter Saturation Voltage IC=8 A, IB=80 mA (*) 2N6055 - - 4 V VBE(ON) Base-Emitter Voltage (*) IC=4 A, VCE=3 V 2N6055 - - 2.8 V fT Transition Frequency IC=3 A, VCE=3 V, f=1 MHz 2N6055 4 - - MHz VCE=3 V, IC=4 A 2N6055 750 - 18000 - hFE DC Current Gain (*) VCE=3.0 V, IC=8 A 2N6055 100 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 17/10/2012 COMSET SEMICONDUCTORS 2|3 NPN 2N6055 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V Pin 1 : Pin 2 : Case : max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 17/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3