PNP BD240 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The NPN complements are BD239, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage (RBE = 100 Ω) VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PT TJ TS Value BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C BD240 BD240A BD240B BD240C IC ICM @ Tamb = 25° C @ Tcase = 25° C Power Dissipation Junction Temperature Storage Temperature -45 -60 -80 -100 -55 -70 -90 -115 -45 -60 80 -100 -5.0 -3 -7 0.5 30 30 150 -65 to +150 Unit V V V V A A W W °C THERMAL CHARACTERISTICS Symbol RthJ-amb RthJ-case Ratings Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case 22/10/2012 COMSET SEMICONDUCTORS Value Unit 70 4.17 °C/W °C/W 1/3 PNP BD240 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO IEBO ICES VCEO(sus) hFE VCE(SAT) VBE(on) hfe fT Ratings Test Condition(s) VCE=-30 V VCE=-30 V VCE=-60 V VCE=-60 V BD240 BD240A Collector Cutoff Current BD240B BD240C BD240 BD240A Emitter Cutoff Current VBE=-5 V BD240B BD240C BD240 VCE=-45 V VCE=-60 V BD240A Collector Cutoff Current (VBE = 0) VCE=-80 V BD240B VCE=-100 V BD240C BD240 Collector-Emitter BD240A Sustaining Voltage IC =-30mA BD240B (IB = 0) (*) BD240C BD240 BD240A VCE=-4 V IC=-0.2 A BD240B BD240C DC Current Gain (*) BD240 BD240A VCE=-4 V IC=-1 A BD240B BD240C BD240 Collector-Emitter IC=-1 A BD240A saturation Voltage (*) IB=-200 mA BD240B BD240C BD240 BD240A VCE=-4 V Base-Emitter Voltage (*) IC=-1 A BD240B BD240C BD240 VCE=10 V BD240A IC=0.2 A BD240B f = 1KHz BD240C Small Signal Current Gain BD240 VCE=-10 V BD240A IC=-0.2 A BD240B f = 1MHz BD240C Transistor frequency VCE=-10 V, IC=-0.2 A, f = 1MHz Min -45 -60 -80 -100 40 Typ - Max Unit -0.3 mA -1.0 mA -0.2 mA V - - 15 - - - - 0.6 V - - 1.3 V - - 20 3 - - - 3 - - MHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 22/10/2012 COMSET SEMICONDUCTORS 2/3 PNP BD240 – A – B – C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Case : 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 22/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3