PNP 2N4398 – 2N4399 – 2N5745 SILICON POWER TRANSISTORS They are PNP transistors mounted in Jedec TO-3 package. They are intended for use in power amplifier and switching circuits applications. Complement to NPN 2N5301 – 2N5302 – 2N5303. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage 2N4398 2N4399 2N5745 2N4398 2N4399 2N5745 2N4398 2N4399 2N5745 Collector Current IC ICM IB IBM PTOT TJ TS Value Collector Peak Current Base Current Base Peak Current Power Dissipation Junction Temperature Storage Temperature @ TC = 25° Unit -40 -60 -80 -40 -60 -80 -5 V V V -30 A -20 50 -7.5 15 200 200 -65 to +200 A A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C RthJ-A Ratings Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value Unit 0.875 35 °C/W °C/W 1|4 24/09/2012 COMSET SEMICONDUCTORS PNP 2N4398 – 2N4399 – 2N5745 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) 2N4398 2N4399 2N5745 VCB = -40 V, IE = 0 2N4398 VCB = -60 V, IE = 0 2N4399 VCB = -80 V, IE = 0 2N5745 2N4398 VCE= -40 V, IB = 0 VCE= -60 V, IB = 0 2N4399 VCE= -80 V, IB = 0 2N5745 2N4398 VEB= -5 V, IC = 0 2N4399 2N5745 VCE= -40 V, VBE= 1.5 V 2N4398 VCE= -40 V, VBE= 1.5 V 2N4399 VCE= -40 V, VBE= 1.5 V 2N5745 VCE= -40 V, VBE= 1.5 V 2N4398 TC = 150°C VCE= -40 V, VBE= 1.5 V 2N4399 TC = 150°C VCE= -40 V, VBE= 1.5 V 2N5745 TC = 150°C 2N4398 2N4399 IC= -10 A, IB= -1 A 2N5745 2N4398 IC= -15 A, IB= -1.5 A 2N4399 2N5745 2N4398 IC= -20 A, IB= -2 A 2N4399 IC= -20 A, IB= -4 A 2N5745 2N4398 IC= -30 A, IB= -6 A 2N4399 2N4398 2N4399 IC= -10 A, IB= -1 A 2N5745 2N4398 IC= -15 A, IB= -1.5 A 2N4399 2N5745 2N4398 IC= -20 A, IB= -2 A 2N4399 IC= -20 A, IB= -4 A 2N5745 VCEO(BR) Collector-Emitter IC= -200 mA Breakdown Voltage (*) IB= 0 ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current ICEX VCE(SAT) VBE(SAT) Collector Cutoff Current Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) Min Typ MAx Unit -40 -60 -80 - - V - - -1 mA - - -5 mA - - -5 mA - - -5 mA - - -10 - - -0.75 - - -1 - - -1 - - -1.5 - - -2 - - -4 - - -1.6 - - -1.7 - - -1.85 - - -2 - - -2.5 V V 2|4 24/09/2012 COMSET SEMICONDUCTORS PNP 2N4398 – 2N4399 – 2N5745 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IC= -15 A, VCE= -2 V Base-Emitter on Voltage (*) VBE(on) IC= -10 A, VCE= -2 V IC= -30 A, VCE= -4 V IC= -20 A, VCE= -4 V IC= -1 A, VCE= -2 V hFE DC Current Gain (*) IC= -15 A, VCE= -2 V IC= -10 A, VCE= -2 V IC= -30 A, VCE= -2 V IC= -20 A, VCE= -4 V fT Transition Frequency VCE= -10 V, IC= -1 A f= 1 MHz 2N4398 2N4399 2N5745 2N4398 2N4399 2N5745 2N4398 2N4399 2N5745 2N4398 2N4399 2N5745 2N4398 2N4399 2N5745 2N4398 2N4399 2N5745 Min Typ MA x - - -1.7 - - -1.5 - - -3 40 - - -2.5 - 15 - 60 5 - - 4 - - 2 - Unit V - MHz - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2 % 3|4 24/09/2012 COMSET SEMICONDUCTORS PNP 2N4398 – 2N4399 – 2N5745 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 Pin 1 : Pin 2 : Case : max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com [email protected] 4|4 24/09/2012 COMSET SEMICONDUCTORS