NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage (IE= 0) VCEO Collector-Emitter Voltage (IB= 0) VEBO Emitter-Base Voltage (IC= 0) IC Collector Current ICM IB PT TJ TStg Value 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 Peak Collector tp = 10ms Current Base current Total power @ Tmb = 70°C Dissipation Junction Temperature Storage Temperature 250 330 440 175 250 300 6 1 2 2 Unit V V V A 5 A 1 A 35 W 200 -65 to +200 °C °C Value Unit THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to ambient in free air 5 °C/W 17/10/2012 COMSET SEMICONDUCTORS 87.5 1|3 NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICEX Ratings Test Condition(s) Collector-Emitter cutIB = 0 ; VCE = 150 V off current Collector-Emitter cut-off current VBE = -1.5V ; VCE = 225 V VBE = -1.5V ; VCE = 340 V VBE = -1.5V ; VCE = 450 V VBE = -1.5V ; VCE = 225 V Tj= 150°C VBE = -1.5V ; VCE = 300 V Tj= 150°C IEBO Emitter cut-offcurrent IC = 0 ; VEB = 6 V VCEO(SUS) Collector-Emitter sustaning Voltage (*) VCE(SAT) Collector-Emitter I = 1 A ; IB = 125 mA saturation Voltage (*) C VBE(SAT) IB = 0 ; IC = 200 mA Base-Emitter I = 1 A ; IB = 100 mA saturation Voltage (*) C VCE = 10 V ; IC = 500 mA hFE DC Current Gain (*) VCE = 10 V ; IC = 1 A VCE = 2 V ; IC = 1 A IS/B Second Breakdown Collector current VCE = 100 V ; t = 1 s fT Transition frequency VCE = 10 V ; IC = 200 mA f = 5 MHz td+tr Turn-on-time IC = 1 A ; IB = 100 mA tf Fall time IC = 1 A ; IB = 100 mA ts Carrier storage time IC = 1 A ; IB = 100 mA 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 Min Typ Max - - 10 5 5 1 mA 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3583 2N3584 2N3585 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 2N3584 2N3585 - - 3 175 250 300 - - 5 0.5 0.5 5 0.75 0.75 - - 1.4 40 10 25 25 8 8 - 200 100 100 80 80 350 - - mA 10 - - MHz - - 3 - - - - 3 4 (*) Measured under pulse conditions :tP <300µs, δ <2%. 17/10/2012 COMSET SEMICONDUCTORS Unit 2|3 V V µs NPN 2N3583 – 2N3584 – 2N3585 MECHANICAL DATA CASE TO-66 DIMENSIONS mm min 30.60 11.94 6.35 0.712 1.27 24.28 4.83 2.41 14.48 9.15 3.60 - A B C D E F G H J K P Q S T Pin 1 : Pin 2 : Case : max 32.52 12.7 8.63 0.863 1.91 24.50 5.33 2.67 14.99 10.50 2.7 4.00 8.89 3.68 Emitter Base Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 17/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3