COMSET 2N6250

 NPN 2N6249 – 2N6250 – 2N6251 HIGH VOLTAGE SILICON POWER TRANSISTORS
The 2N6249 – 2N6250 – 2N6251 are NPN silicon transistors in Jedec TO-3 metal case.
They are designed for high voltage inverters, switching regulators and line operated amplifier
applications. Especially well suited for switching power supply applications.
Compliance to RoHS.
• High Voltage Breakdown Rating
• Low Saturation Voltages
• Fast Switching Capability
• High Es/b Energy Handling Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (*)
VCER
Collector-Emitter Voltage (*) RBE=50 Ω
VCB
Collector-Base Voltage (*)
VEB
IC
ICM
IB
Pt
TJ
Tstg
Emitter-Base Voltage
Collector Current
Collector Current Peak
Base Current
Total Power Dissipation
Junction Temperature (*)
Storage Temperature (*)
20/11/2012
@ TC = 25°
COMSET SEMICONDUCTORS
Value
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
Unit
200
275
350
225
300
375
300
375
450
6
10
30
10
175
200
-65 to +200
V
V
V
V
A
A
W
°C
1|4
NPN 2N6249 – 2N6250 – 2N6251 ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
200
275
350
225
300
375
-
-
-
-
5
-
-
5
-
-
10
-
-
5
-
-
10
-
-
5
-
-
10
-
-
1
mA
10
8
6
-
50
50
50
-
-
-
1.5
V
-
-
2.25
V
VCE=30 V
t=1 s, non-repetitive
5.8
-
-
A
VCE=10 V, IC=1 A, f = 1.0 MHz
2.5
-
-
MHz
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
IC=200 mA, IB=0
VCER(SUS)
Collector-Emitter
Sustaining Voltage
IC=0.2 A, RBE=50 Ω
ICEO
Collector-Emitter Current
VCE=150 V, IB=0
VCE=225 V, IB=0
VCE=300 V, IB=0
VCE=200 V, VEB=-1.5 V
VCE=200 V, VEB=-1.5 V
TC = 150°C
VCE=275 V, VEB=-1.5 V
ICEX
Collector Cutoff Current
VCE=275 V, VEB=-1.5 V
TC = 150°C
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
VCE=350 V, VEB=-1.5 V
VCE=350 V, VEB=-1.5 V
TC = 150°C
IEBO
Emitter Cutoff Current
hFE
Dc Current Gain
VCE(SAT)
Collector-Emitter
Saturation Voltage (*)
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
Is/b
fT
IC=10 A, VCE=3 V
Second Breakdown
Collector Current With
Base Forward Biased
Transition Frequency
20/11/2012
VBE=6 V, IC=0
IC=10 A, IB=1 A
IC=10 A, IB=1.25 A
IC=10 A, IB=1.67 A
IC=10 A, IB=1 A
IC=10 A, IB=1.25 A
IC=10 A, IB=1.67 A
COMSET SEMICONDUCTORS
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2|4
Unit
V
V
mA
mA
NPN 2N6249 – 2N6250 – 2N6251 SWITCHING TIMES
Symbol
Ratings
tr
Rise Time
ts
Storage Time
tf
Fall Time
Test Condition(s)
VCC= 200 V, IC= 10 A
IB1 = -IB2=1 A
VCC= 200 V, IC= 10 A
IB1 = -IB2=1.25 A
VCC= 200 V, IC= 10 A
IB1 = -IB2=1.67 A
Min
Typ
Max
2N6249
-
-
2
2N6250
-
-
3.5
2N6251
-
-
1
Unit
µs
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
20/11/2012
COMSET SEMICONDUCTORS
Value
Unit
1
°C/W
3|4
NPN 2N6249 – 2N6250 – 2N6251 MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
A
B
C
D
F
G
N
P
R
U
V
min
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use
of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without
notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor
does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in
life support devices or systems.
www.comsetsemi.com
20/11/2012
[email protected]
COMSET SEMICONDUCTORS
4|4