NPN BUX41N HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX41N is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEX VEBO IC ICM IB Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 VBE = -1.5 V IC = 0 tp = 10ms @ TC = 25° Value Unit 160 220 220 7 18 25 3.6 120 200 -65 to +200 V V V V A A A Watts °C °C Value Unit 1.46 °C/W THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 1/3 NPN BUX41N ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VEBO ICEO Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain (*) VCEO(SUS) VCE(SAT) VBE(SAT) IS/B ES/B fT ton IC= 200 mA IC= 0 A, IE= 50 mA VCE= 130 V, IB= 0 A VCE= 220 V, VBE= -1.5 V VCE= 220 V, VBE= -1.5 V Tcase = 125°C VEB= 5.0 V, IC= 0 A IC= 8 A, VCE= 4.0 V IC= 12 A, VCE= 4.0 V IC= 8 A, IB= 0.8 A IC= 12 A, IB= 1.5 A Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage IC= 12 A , IB= 1.5 A (*) VCE= 30 V, ts = 1s Second breakdown collector current VCE= 100 V, ts = 1s Vclamp= 160 V Clamped ES/B Collector current L= 500 µH VCE= 15 V, IC= 1 A Transition frequency f= 10 MHz IC= 12 A, IB= 1.5 A Turn-on time VCC= 30 V ts Storage time tf File time IC= 12 A, VCC= 30 V IB1 = -IB2 = 1.5 A Min Typ Max Unit 160 - - V 7 - - 1 1 V mA - - 5 15 8 - 0.5 0.75 1 45 1.2 1.6 - 1.5 2 4 0.27 - - A 12 - - A 8 - - MHz - 0.35 1.3 - 0.85 1.5 - 0.14 0.8 mA mA - V µs (*) Pulse Duration = 300 µs, Duty Cycle <= 2% 01/10/2012 COMSET SEMICONDUCTORS 2/3 NPN BUX41N MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 01/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3