NPN BD135 – BD137 – BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD135-BD137-BD139 are NPN Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. PNP complements are BD136-BD138-BD140. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage (IE= 0) VCEO Collector-Emitter Voltage (IB= 0) VCER Collector-Emitter Voltage (RBE= 1 kΩ) VEBO Emitter-Base Voltage (IC= 0) IC Collector Current IB PT TJ TStg Base current Total power Dissipation Junction Temperature Storage Temperature Value BD135 BD137 BD139 BD135 BD137 BD139 BD135 BD137 BD139 IC ICM IB Tmb = 70°C Unit 45 60 100 45 60 80 45 60 100 5 1.5 2 0.5 8 150 -65 to +150 A W °C °C Value Unit 10 100 °C/W °C/W V V V V A THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-a Ratings Thermal Resistance, Junction-Case Thermal Resistance, Junction-ambient in free air 25/09/2012 27/08/201225/09/2012 COMSET SEMICONDUCTORS 1|3 NPN BD135 – BD137 – BD139 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 30 V ICBO Collector cut-off current IE=0 ,VCB = 30V Tj= 125°C BD135 BD137 BD139 BD135 BD137 BD139 Min Typ Max 45 60 80 - 0,1 0,1 0,1 10 10 10 10 - Unit µA IEBO Emitter cut-offcurrent IC=0, VEB=5 V VCEO(SUS) Collector-Emitter sustaning Voltage (1) IB=0 , IC=30 mA VCE(SAT) Collector-Emitter saturation Voltage (1) IC=0.5 A,IB=50 mA - - 0,5 VCE=2 V, IC=5 mA 25 40 63 100 25 - 250 160 250 - VCE=2 V, IC=500 mA - - 1 V VCE=5 V, IC=50 mA , f= 35 MHz - 250 - MHz hFE VBE fT DC Current Gain (1) Base-Emitter Voltage(1) Transition frequency BD135 BD137 BD139 BDxxx VCE=2 V, IC=150 mA BDxxx -10 BDxxx -16 VCE=2 V, IC=500 mA µA V V 1. Measured under pulse conditions :tP <300µs, δ <2%. 25/09/2012 27/08/201225/09/2012 COMSET SEMICONDUCTORS 2|3 NPN BD135 – BD137 – BD139 MECHANICAL DATA CASE TO-126 DIMENSIONS A B C D E F G L M N P S min max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 typ. 0.49 0.75 4.4 typ. 15.7 typ. 1.27 typ. 3.75 typ. 3.0 3.2 2.54 typ. Pin 1 : Pin 2 : Pin 3 : Emitter Collector Base Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 25/09/2012 27/08/201225/09/2012 [email protected] COMSET SEMICONDUCTORS 3|3