COMSET 2N6050_12

PNP 2N6050 – 2N6051 – 2N6052
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCBO
Collector-Base Voltage
IE=0
VCEO
Collector-EmitterVoltage
IB=0
VCEX
Collector-EmitterVoltage
VBE= 1.5 V
VEBO
IC
ICM
IB
PT
TJ
Ts
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC=0
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
@ TC < 25°
-60
-80
-100
-60
-80
-100
-60
-80
-100
-5.0
-12
-20
-200
150
200
-65 to +200
Unit
V
V
V
V
A
A
mA
W
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
17/10/2012
COMSET SEMICONDUCTORS
Value
Unit
1.17
°C/W
1|3
PNP 2N6050 – 2N6051 – 2N6052
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEX
Ratings
Collector Cutoff
Current
Test Condition(s)
VCE= VCEX =-60 V, VBE=1.5 V
VCE= VCEX =-80 V, VBE=1.5 V
VCE= VCEX =-100 V
VBE=1.5 V
VCE= VCEX =-60 V, VBE=1.5 V
TC=150°C
VCE= VCEX =-80 V, VBE=1.5 V
TC=150°C
VCE= VCEX =-100 V
VBE=1.5 V, TC=150°C
VCE=-30 Vdc, IB=0
VCE=-40 Vdc, IB=0
VCE=-50 Vdc, IB=0
ICEO
Collector Cutoff
Current
IEBO
Emitter Cutoff
Current
VCEO(SUS)
Collector-Emitter
Sustaining Voltage IC=-0.1 A
(*)
VCE(SAT)
Collector-Emitter
saturation Voltage
(*)
VEB=-5 V
IC=-6 A, IB=-24 mA
IC=-12 A, IB=-120 mA
VBE(SAT)
Base-Emitter
Saturation Voltage IC=-12 A, IB=-120 mA
(*)
VBE(ON)
Base-Emitter
Voltage (*)
IC=-6 A, VCE=-3 V
fT
Transition
Frequency
IC=-5 A, VCE=-3 V, f=1 MHz
hFE
DC Current Gain
(*)
VCE=-3 V, IC=-6.0 A
VCE=-3.0 V, IC=-12 A
Min
Typ
MAx Unit
2N6050
2N6051
-
-
2N6052
-
-
2N6050
-
-
2N6051
-
-
2N6052
-
-
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
2N6050
2N6051
2N6052
-60
-80
-100
-
-
-
-2.0
-500
µA
-5
mA
-1.0
mA
-2.0
mA
-
V
V
-
-
-3.0
-
-
-4
V
-
-
-2.8
V
4
-
-
MHz
750
-
18000
-
100
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
17/10/2012
COMSET SEMICONDUCTORS
2|3
PNP 2N6050 – 2N6051 – 2N6052
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
Pin 1 :
Pin 2 :
Case :
max
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
17/10/2012
[email protected]
COMSET SEMICONDUCTORS
3|3