PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value VCBO Collector-Base Voltage IE=0 VCEO Collector-EmitterVoltage IB=0 VCEX Collector-EmitterVoltage VBE= 1.5 V VEBO IC ICM IB PT TJ Ts Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation Junction Temperature Storage Temperature IC=0 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 @ TC < 25° -60 -80 -100 -60 -80 -100 -60 -80 -100 -5.0 -12 -20 -200 150 200 -65 to +200 Unit V V V V A A mA W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 17/10/2012 COMSET SEMICONDUCTORS Value Unit 1.17 °C/W 1|3 PNP 2N6050 – 2N6051 – 2N6052 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEX Ratings Collector Cutoff Current Test Condition(s) VCE= VCEX =-60 V, VBE=1.5 V VCE= VCEX =-80 V, VBE=1.5 V VCE= VCEX =-100 V VBE=1.5 V VCE= VCEX =-60 V, VBE=1.5 V TC=150°C VCE= VCEX =-80 V, VBE=1.5 V TC=150°C VCE= VCEX =-100 V VBE=1.5 V, TC=150°C VCE=-30 Vdc, IB=0 VCE=-40 Vdc, IB=0 VCE=-50 Vdc, IB=0 ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-0.1 A (*) VCE(SAT) Collector-Emitter saturation Voltage (*) VEB=-5 V IC=-6 A, IB=-24 mA IC=-12 A, IB=-120 mA VBE(SAT) Base-Emitter Saturation Voltage IC=-12 A, IB=-120 mA (*) VBE(ON) Base-Emitter Voltage (*) IC=-6 A, VCE=-3 V fT Transition Frequency IC=-5 A, VCE=-3 V, f=1 MHz hFE DC Current Gain (*) VCE=-3 V, IC=-6.0 A VCE=-3.0 V, IC=-12 A Min Typ MAx Unit 2N6050 2N6051 - - 2N6052 - - 2N6050 - - 2N6051 - - 2N6052 - - 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 -60 -80 -100 - - - -2.0 -500 µA -5 mA -1.0 mA -2.0 mA - V V - - -3.0 - - -4 V - - -2.8 V 4 - - MHz 750 - 18000 - 100 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 17/10/2012 COMSET SEMICONDUCTORS 2|3 PNP 2N6050 – 2N6051 – 2N6052 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V Pin 1 : Pin 2 : Case : max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 17/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3