COMSET BDX33

NPN BDX33 – BDX33A – BDX33B – BDX33C
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intented for use in power linear and switching applications.
The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
IB=0
VCBO
Collector-Base Voltage
IE=0
IC
Collector Current
IC(RMS)
ICM
IB
PT
TJ
TS
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
@ TC = 25°
Unit
45
60
80
100
45
60
80
100
10
15
0.25
70
A
W
-65 to +150
°C
Value
Unit
1.78
°C/W
V
V
A
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
23/10/2012
COMSET SEMICONDUCTORS
1/4
NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
IC=100 mA
VCER(SUS)
Collector-Emitter
Sustaining Voltage (*)
IB=100 mA,
RBE=100Ω
VCEV(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=100 mA
VBE=-1.5 V
Collector Cutoff Current
VCB=22V
VCB=30V
VCB=40V
VCB=50V
VCB=22V, TC=100°C
VCB=30V, TC=100°C
VCB=40V, TC=100°C
VCB=50V, TC=100°C
ICEO
IEBO
Emitter Cutoff Current
VBE=-5 V
ICBO
Collector-Base Cutoff
Current
VCBO=45 V
VCBO=60 V
VCBO=80 V
VCBO=100 V
23/10/2012
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
COMSET SEMICONDUCTORS
Min
Typ
Max
45
60
80
100
45
60
80
100
45
60
80
100
-
-
-
-
-
-
-
Unit
V
V
V
0.5
mA
10
5.0
mA
mA
0.2
2/4
NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
VCE(SAT)
VF
VBE
hFE
Ratings
Test Condition(s)
VCBO=45 V
TC=100°C
VCBO=60 V
TC=100°C
VCBO=80 V
TC=100°C
VCBO=100 V
TC=100°C
Collector-Base Cutoff
Current
Collector-Emitter
saturation Voltage (*)
Forward Voltage (pulse
method)
Base-Emitter Voltage (*)
DC Current Gain (*)
Min
Typ
BDX33
-
-
BDX33A
-
-
BDX33B
-
-
BDX33C
-
-
-
-
BDX33
BDX33A
IC=4.0 A, IB=8.0 mA
BDX33B
BDX33C
BDX33
BDX33A
IC=3.0 A, IB=6.0 mA
BDX33B
BDX33C
BDX33
BDX33A
IF=8 A
BDX33B
BDX33C
BDX33
IC=4.0 A, VCE=3.0V
BDX33A
BDX33B
IC=3.0 A, VCE=3.0V
BDX33C
BDX33
VCE=3.0 V, IC=4.0 A
BDX33A
BDX33B
VCE=3.0 V, IC=3.0 A
BDX33C
Max
Unit
5
mA
2.5
V
-
-
2.5
-
-
4.0
-
-
2.5
-
-
2.5
750
-
-
750
-
-
V
V
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
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NPN BDX33 – BDX33A – BDX33B – BDX33C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Case :
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
23/10/2012
[email protected]
COMSET SEMICONDUCTORS
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