NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage IB=0 VCBO Collector-Base Voltage IE=0 IC Collector Current IC(RMS) ICM IB PT TJ TS Base Current Power Dissipation Junction Temperature Storage Temperature Value BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C @ TC = 25° Unit 45 60 80 100 45 60 80 100 10 15 0.25 70 A W -65 to +150 °C Value Unit 1.78 °C/W V V A THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 23/10/2012 COMSET SEMICONDUCTORS 1/4 NPN BDX33 – BDX33A – BDX33B – BDX33C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA VCER(SUS) Collector-Emitter Sustaining Voltage (*) IB=100 mA, RBE=100Ω VCEV(SUS) Collector-Emitter Sustaining Voltage (*) IC=100 mA VBE=-1.5 V Collector Cutoff Current VCB=22V VCB=30V VCB=40V VCB=50V VCB=22V, TC=100°C VCB=30V, TC=100°C VCB=40V, TC=100°C VCB=50V, TC=100°C ICEO IEBO Emitter Cutoff Current VBE=-5 V ICBO Collector-Base Cutoff Current VCBO=45 V VCBO=60 V VCBO=80 V VCBO=100 V 23/10/2012 BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C COMSET SEMICONDUCTORS Min Typ Max 45 60 80 100 45 60 80 100 45 60 80 100 - - - - - - - Unit V V V 0.5 mA 10 5.0 mA mA 0.2 2/4 NPN BDX33 – BDX33A – BDX33B – BDX33C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO VCE(SAT) VF VBE hFE Ratings Test Condition(s) VCBO=45 V TC=100°C VCBO=60 V TC=100°C VCBO=80 V TC=100°C VCBO=100 V TC=100°C Collector-Base Cutoff Current Collector-Emitter saturation Voltage (*) Forward Voltage (pulse method) Base-Emitter Voltage (*) DC Current Gain (*) Min Typ BDX33 - - BDX33A - - BDX33B - - BDX33C - - - - BDX33 BDX33A IC=4.0 A, IB=8.0 mA BDX33B BDX33C BDX33 BDX33A IC=3.0 A, IB=6.0 mA BDX33B BDX33C BDX33 BDX33A IF=8 A BDX33B BDX33C BDX33 IC=4.0 A, VCE=3.0V BDX33A BDX33B IC=3.0 A, VCE=3.0V BDX33C BDX33 VCE=3.0 V, IC=4.0 A BDX33A BDX33B VCE=3.0 V, IC=3.0 A BDX33C Max Unit 5 mA 2.5 V - - 2.5 - - 4.0 - - 2.5 - - 2.5 750 - - 750 - - V V - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 23/10/2012 COMSET SEMICONDUCTORS 3/4 NPN BDX33 – BDX33A – BDX33B – BDX33C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Case : 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 23/10/2012 [email protected] COMSET SEMICONDUCTORS 4/4