COMSET BU806

SEMICONDUCTORS
BU806
SILICON DARLINGTON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in
a TO-220 plastic package.
They are high voltage, high current devices for fast switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
V
VCBO
Collector-Base Voltage
400
VCEV
Collector-Emitter Voltage
400
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
8
A
ICM
Collector Peak Current
15
A
IB
Base Current
2
A
PT
Power Dissipation at Case Temperature
60
W
tJ
Junction Temperature
ts
Storage Temperature range
Tmb < 25°C
150
°C
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
From Junction to Case Thermal Resistance
RthJA
From Junction to Free-Air Thermal Resistance
29/09/2012
COMSET SEMICONDUCTORS
Value
2.08
70
Unit
°C/W
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SEMICONDUCTORS
BU806
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
200
-
-
V
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= 100 mA, IB= 0
ICEOV
Collector Cutoff Current
VCE = 400 V, VBE(off) = 6 V
-
-
100
µA
ICES
Collector Cutoff Current
VCE = 400 V, VBE(off) = 0 V
-
-
100
µA
IEBO
Emitter Cutoff Current
VEB= 6 V, IC= 0
-
-
3
mA
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 5 A, IB= 250 mA
-
-
1.5
V
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
IC= 5 A, IB= 250 mA
-
-
2.4
V
VF
Diode forward Voltage (*)
IF= 7 A
-
-
3.5
V
Min
Typ
Max
Unit
-
0.35
-
-
0.55
-
-
0.2
-
SWITCHING TIMES.
Symbol
Ratings
ton
turn-on time
ts
Storage Time
tf
Fall Time
Test Condition(s)
VCC= 100 V; IC= 5 A
IB1= 50mA, IB2= 500 mA
µs
(*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 1.5%
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SEMICONDUCTORS
BU806
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Package
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
29/09/2012
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