NPN BUX84 – BUX85 SILCON DIFFUSED POWER TRANSISTORS The BUX84-BUX85 are NPN transistors mounted in Jedec TO-220 plastic package. They are designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCESM Collector-Emitter Voltage (open base) IC Collector Current Value IC ICM IB Base Current IBM Base Current (peak value) -IBM Reverse Base Current (peak value) (1) PD Total Device Dissipation TJ Junction Temperature TStg Storage Temperature range @ TC = 50° BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 400 450 800 1000 Unit V V 2 A 3 A 0.75 A 1 A 1 A 40 Watts 150 °C -65 to +150 °C Value Unit THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to mounting base 70 K/W RthJ-mb Thermal Resistance, Junction to ambient in free air 2.5 K/W COMSET SEMICONDUCTORS 1/3 NPN BUX84 – BUX85 ELECTRICAL CHARACTERISTICS (3) TC=25°C unless otherwise noted Symbol ICES Ratings Test Condition(s) Collector Cutoff Current(2) VCEM= VCESmax VBE=0V BUX84 BUX85 VCEM= VCESmax VBE=0V Tj =125° C BUX84 IEBO Emitter Cutoff Current VBE=5.0 V, IC=0 VCEOsust Collector-Emitter sustaining IC=100 mA, IBoff= 0 Voltage L=25mH hFE DC Current Gain VCE(SAT) Collector-Emitter saturation Voltage IC=0.1 A, VCE=5 V VBE(SAT) Base-Emitter saturation Voltage fT Transition frequency ton Turn-on time TS Storage time Tf Fall Time Tf Fall Time IC=0.3 A, IB=30 mA IC=1 A, IB=0.2A IC=1 A, IB=0.2 A IC=0.5 A, VCE=10 V f= 1MHz IC=1 A, VCC=250 V IB1=0.2A, IB2=0.4A IC=1 A, VCC=250 V IB1=0.2A, IB2=0.4 IC=1 A, VCC=250 V IB1=0.2A, IB2=0.4 IC=1 A, VCC=250 V IB1=0.2A, IB2=0.4 TC=95° Min Typ Max Unit - - 0.2 - - 1.5 - - 1 mA 400 450 - - V 30 50 - - - - 0.8 - - 1 - - 1.1 4 20 - - 0.3 0.5 - 2 3.5 - 0.4 - - - 1.4 mA BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 BUX84 BUX85 V MHz µs (1) Turn off current (2) Measured with a half-sinewave (curve tracer) (3)Puls test : PW =300µs, Duty Cycle< 2% 26/10/2012 COMSET SEMICONDUCTORS 3/3 NPN BUX84 – BUX85 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Case : 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3