PNP BSV15 – BSV16 – BSV17 MEDIUM POWER TRANSISTORS They are silicon transistors mounted in TO-39 metal package. They are intended for general industrial applications. High current and low voltage. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value BSV15 BSV16 BSV17 BSV15 BSV16 BSV17 -40 -60 -90 -40 -60 -90 Unit VCBO Collector-Base Voltage IE = 0 VCEO Collector-Emitter Voltage IB = 0 VEBO Emitter-Base Voltage IC = 0 -5 V IC Collector Current -1 A ICM Peak Collector Current -2 A IBM Peak Base Current -0.2 A Ptot Total Power Dissipation TJ TStg Tamb Junction Temperature Storage Temperature Range Operating Ambient Temperature @ Tcase= < 25° @ Tamb= < 25° @ Tmb= < 50° V V 0.8 5 5 200 -65 to +150 -65 to +150 °C °C °C Value Unit W THERMAL CHARACTERISTICS Symbol Ratings RthJ-c Thermal Resistance, Junction-case 35 K/ W RthJ-amb Thermal Resistance, Junction-ambient in free air 220 K/ W RthJ-mb Thermal Resistance, Junction to mounting base 30 K/ W 09/11/2012 COMSET SEMICONDUCTORS 1|4 PNP BSV15 – BSV16 – BSV17 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCE(SAT) VBE hFE Ratings Test Condition(s) IE= 0, VCB= -40 V BSV15 IE= 0, VCB = -60 V BSV16 IE= 0, VCB = -80 V BSV17 Collector – Cutoff Current VCB =-40 V BSV15 IE= 0, V VCB =-60 V BSV16 Tamb = 150°c VCB =-80 V BSV17 BSV15 Emitter – Cutoff IC= 0, VCE= -4V BSV16 Current BSV17 BSV15 Collector-Emitter BSV16 I = -500 mA, IB= -25 mA saturation Voltage (*) C BSV17 BSV15 IC= -100 mA, VCE= -1V BSV16 BSV17 Base-Emitter Voltage (*) BSV15 IC= -500 mA, VCE= -1V BSV16 BSV17 BSV15 Gr.10 BSV16 IC= -100 µA BSV17 VCE= -1 V BSV15 Gr.16 BSV16 BSV15 Gr.10 BSV16 IC= -100 mA DC Current Gain (*) BSV17 VCE= -1 V BSV15 Gr.16 BSV16 BSV15 Gr.10 BSV16 IC= -500 mA BSV17 VCE= -1 V BSV15 Gr.16 BSV16 12/11/2012 COMSET SEMICONDUCTORS Min Typ Max Unit - - -100 nA - - -50 µA - - -50 nA - - -1 V - - -1 - - -1 20 75 - 30 120 - 63 100 160 V 100 160 250 25 55 - 35 85 - 2/4 PNP BSV15 – BSV16 – BSV17 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) fT Transition Frequency IC= -50 mA, VCE= -10 V f=100 MHz CC Collector Capacitance IE= ie = 0, VCB= -10V f = 1 MHZ Emitter Capacitance IE= ie = 0, VCB= -10V f = 1 MHZ CE BSV15 BSV16 BSV17 Min Typ Max Unit 50 - - MHZ - 20 30 - 15 25 - 180 - pF Min Typ Max Unit - - 650 ns - - 500 ns pF SWITCHING TIME Symbol Ratings toff Turn-off times ton Turn-on times Test Condition(s) IC= -100 mA IBon= -5 mA IBoff= 5 mA (*) Pulsed : pulse duration = 300µs, duty cycle = 1% 12/11/2012 COMSET SEMICONDUCTORS 3/4 PNP BSV15 – BSV16 – BSV17 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised October 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 12/11/2012 [email protected] COMSET SEMICONDUCTORS 4/4