UPS5100 5 A High Voltage Schottky Barrier Rectifier KEY FEATURES DESCRIPTION In addition to its size advantages, Powermite3® package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly, and a unique locking tab acts as an integral heat sink. Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) WWW . Microsemi .C OM In Microsemi’s new Powermite3® SMT package, these high efficiency ultrafast rectifiers offer the power handing capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. ! High power surface mount package. ! Guard Ring die construction for transient protection. ! Silicon Schottky rectifiers no reverse voltage recovery. ! Internal heat sink locking tabs ! Low forward voltage. ! Full metallic bottom eliminates flux entrapment ! Compatible with automatic insertion equipment ! Low profile-maximum height of 1mm supplied in 16 mm tape reel- 5000 units/ 13” reel. Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V APPLICATIONS/BENEFITS RMS Reverse Voltage V R (RMS) 70 V Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load@ Tc =80 ºC Storage Temperature Io 5 A IFSM 100 A ! Switching and Regulating Power Supplies. ! Charge Pump Circuits. ! Reduces reverse recovery loss due to low IRM. T stg -65 to +150 ºC Operating Temperature T op -65 to +125 ºC ! Small foot print 190 X 300 mils 1:1 Actual size THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction-to Bottom Rja (1) 2.5 ºC/Watt (1) When Mounted on PC board with 2 ounce copper pattern. UPS5100 Copyright 2001 Rev. 0, 2003-02-12 Microsemi Page 1 UPS5100 5 A High Voltage Schottky Barrier Rectifier ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Symbol Typ. Max 0.75 0.58 0.84 0.67 0.81 0.64 0.90 0.73 VFm VBR IR = 0.2 mA Irm VR = 100V, Tj = 25ºC VR = 100V, Tj = 125 ºC 15 10 CT VR = 4 V; F = 1 MHZ 150 Reverse Current (Note1) Capacitance Min IF = 5 A , Tj = 25 ºC IF = 5 A , Tj = 125 ºC IF = 10 A , Tj = 25 ºC IF = 10 A , Tj = 125 ºC Forward Voltage (Note 1) Reverse Break Down Voltage (Note 1) Conditions 100 Units V V 200 20 µA mA pF Note: 1 Short duration test pulse used to minimize self – heating effect. Copyright 2001 Rev. 0, 2003-02-12 Microsemi Page 2 WWW . Microsemi .C OM Parameter UPS5100 5 A High Voltage Schottky Barrier Rectifier WWW . Microsemi .C OM PAD LAYOUT ELECTRICALS Copyright 2001 Rev. 0, 2003-02-12 Microsemi Page 3 UPS5100 5 A High Voltage Schottky Barrier Rectifier WWW . Microsemi .C OM 16 mm TAPE 13 INCH REEL MECHANICAL PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2001 Rev. 0, 2003-02-12 Microsemi Page 4 UPS5100 5 A High Voltage Schottky Barrier Rectifier WWW . Microsemi .C OM NOTES: NOTES Copyright 2001 Rev. 0, 2003-02-12 Microsemi Page 5 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.