GXELECTRONICS B5818W

B5817W-B5819W
特 性(FEATURES):
◆
Extremely low VF.
◆Low
stored change,majority carrier conduction.
◆Low
power loss/high efficient
◆For
Use In Low Voltage, High Frequency Inverters.
◆Free
Wheeling, And Polarity Protection Applications.
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Symbol
VRSM
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak Forward Surge Current @=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
VR
VR(RMS)
B5817W
B5818W
B5819W
24
36
48
V
20
30
40
V
14
21
28
V
Unit
IO
1
A
IFSM
25
A
Pd
250
mW
RθjA
80
℃/W
Tj,Tstg
-65 to +125
℃
B5817W-B5819W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
CD
Test Conditions
IR=1mA
B5817W
B5818W
B5819W
VR=20V
VR=30V
VR=40V
B5817W
B5818W
B5819W
MIN
MAX
20
30
40
V
1
B5817W
IF=1A
IF=3A
0.45
0.75
B5818W
IF=1A
IF=3A
0.55
0.875
B5819W
IF=1A
IF=3A
0.6
0.9
VR=4V,f=1MHz
120
ORDERING INFORMATION
Type No.
B5817W
B5818W
B5819W
Marking
SJ
SK
SL
Unit
Package Code
SOD-123
SOD-123
SOD-123
B5817W-B5819W
mA
V
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified