JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Symbol B5817W B5818W B5819W Unit Non-Repetitive Peak Reverse Voltage VRM 20 30 40 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V Parameter RMS Reverse Voltage Average Rectified Output Current IO 1 A Peak Forward Surge Current @t=8.3ms IFSM 9 A Repetitive Peak Forward Current IFRM 1.5 A Power Dissipation Pd 500 mW Thermal Resistance Junction to Ambient RθJA 250 ℃/W Storage Temperature TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions IR= 1mA Reverse breakdown voltage Reverse voltage leakage current IR VR=20V VR=30V VR=40V B5817W Forward voltage VF B5818W B5819W Diode capacitance B5817W B5818W B5819W B5817W B5818W B5819W V(BR) CD Min Max 20 30 40 V 1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz Unit 120 mA V V V pF A,May,2011