CNX83AG OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 approval pending 1 2 6 5 3 4 1.2 l EN60950 approval pending DESCRIPTION The CNX83AG optically coupled isolator consists of an infrared light emitting diode and a NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l High Current Transfer Ratio (40% min) l Low Saturation Voltage suitable for TTL integrated circuits l High BVCEO (50V min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) 7.62 7.62 6.62 4.0 3.0 0.5 0.26 3.0 0.5 3.35 10.16 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 50V 70V 6V 160mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 13/12/00 DB92513-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 Collector-emitter Breakdown (BVCEO) ( Note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (IC / IF ) (Note 2) 1.2 1.5 TEST CONDITION V V µA IF = 10mA IR = 10µA VR = 6V 50 V IC = 1mA 70 6 V V nA IC = 100µA IE = 100µA VCE = 10V 10 50 0.4 10mA IF , 0.4V VCE 10mA IF , 5V VCE 1.5 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Turn-on Time Turn-off Time Turn-on Time Turn-off Time Note 1 Note 2 13/12/00 ton toff ton toff 0.4 5300 7500 5x1010 3 3 12 12 V 10mA IF , 4mA IC VRMS VPK Ω See note 1 See note 1 VIO = 500V (note 1) µs µs µs µs VCC = 5V , IC = 2mA , RL = 100Ω VCC = 5V , IC = 2mA , RL = 1kΩ Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92513-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 50 30 40 20 30 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 6 8 Collector-emitter Saturation Voltage vs. Ambient Temperature 60 50 40 30 20 0 -30 0 25 50 75 100 125 Collector-emitter saturation voltage V CE(SAT) (V) Forward Current vs. Ambient Temperature 10 10 0.28 0.24 IF = 10mA IC = 4mA 0.20 0.16 0.12 0.08 0.04 0 -30 Ambient temperature TA ( °C ) 0 25 50 75 100 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 2.8 1.5 IF = 10mA VCE = 0.4V Relative current transfer ratio Relative current transfer ratio 4 Collector-emitter voltage VCE ( V ) 70 1.0 0.5 2.4 2.0 1.6 1.2 0.8 VCE = 0.4V TA = 25°C 0.4 0 0 -30 13/12/00 2 Ambient temperature TA ( °C ) 80 Forward current I F (mA) TA = 25°C 50 Collector current I C (mA) Collector power dissipation P C (mW) 200 0 25 50 75 Ambient temperature TA ( °C ) 100 1 2 5 10 20 50 Forward current IF (mA) DB92513-AAS/A1