CNX82A CNX82AX NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT l l l APPROVALS UL recognised, File No. E91231 Package System " GG " Dimensions in mm 2.54 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 Certified to EN60950 by :Nemko - Certificate No. P01102464 7.0 6.0 1 2 6 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 3.0 DESCRIPTION The CNX82A series of optically coupled isolator consists of an infrared light emitting diode and an NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES l High Current Transfer Ratio (40% min) l Low Saturation Voltage suitable for TTL integrated circuits l High BV CEO (50V min) l High Isolation Voltage (5.3kV RMS ,7.5kV PK ) l Base pin unconnected for improved noise immunity in high EMI environment APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 13° Max 0.5 0.5 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current Power Dissipation 50V 6V 50mA 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 6/2/08 DB92286 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 50 Current Transfer Ratio (IC / IF ) (Note 2) 0.4 V IF = 10mA 10 µA VR = 6V V IC = 1mA V nA IE = 100µA VCE = 10V 50 10mA IF , 0.4V VCE 10mA IF , 5V VCE 1.5 0.4 V 10mA IF , 4mA IC Input to Output Isolation Voltage VISO 5300 7500 VRMS VPK See note 1 See note 1 Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1) µs µs VCC = 5V , IF = 10mA , RL = 75Ω Response Time - Rise, tr Response Time - Fall, tf 6/2/08 1.5 6 Collector-emitter Saturation VoltageVCE (SAT) Note 1 Note 2 TEST CONDITION 2 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92286m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 50 30 40 20 30 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 6 8 Collector-emitter Saturation Voltage vs. Ambient Temperature 60 50 40 30 20 0 -30 0 25 50 75 100 125 Collector-emitter saturation voltage VCE(SAT) (V) Forward Current vs. Ambient Temperature 10 0.24 IF = 10mA IC = 4mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current Relative current transfer ratio 1.5 10 0.28 Ambient temperature TA ( °C ) Relative current transfer ratio 4 Collector-emitter voltage VCE ( V ) 70 IF = 10mA VCE = 0.4V 1.0 0.5 2.8 2.4 2.0 1.6 1.2 0.8 VCE = 0.4V TA = 25°C 0.4 0 0 -30 6/2/08 2 Ambient temperature TA ( °C ) 80 Forward current IF (mA) TA = 25°C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 0 25 50 75 Ambient temperature TA ( °C ) 100 1 2 5 10 20 50 Forward current IF (mA) DB92286m-AAS/A3