KEXIN 2SC945

Diodes
Transistors
SMD Type
NPN Silicon Transistor
2SC945
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
● High hFE linearity
0.55
● Collector current up to 150mA
+0.1
1.3-0.1
+0.1
2.4-0.1
■ Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC
150
mA
power dissipation
PC
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
Junction temperature
Storage temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Testconditons
Min
Typ
Max
Unit
IC=100 μA, IE=0
60
V(BR)CEO
IC=1mA , IB=0
50
V
V(BR)EBO
IE=100 μA, IC=0
5
V
Collector cutoff current
ICBO
VCB = 60V, IE = 0
Emitter cutoff current
IEBO
DC current gain
hFE
V
VEB = 5.0 V, IC = 0
VCE = 6.0V, IC =1.0mA
130
VCE = 6.0V, IC =0.1mA
40
0.1
μA
0.1
μA
400
Collector saturation voltage
VCE(sat)
IC=100mA,IB=10mA
0.3
V
Base saturation voltage
VBE(sat)
IC=100mA,IB=10mA
1.0
V
VCB = 10 V, IE = 0 , f = 1 MHz
3.0
pF
Collector to base capacitance
Cob
Noise figure
NF
VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ
Transition frequency
fT
VCE=6V,IC=10mA,f =30 MHz
4
150
10
dB
MHz
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Transistors
Diodes
SMD Type
2SC945
2
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