Diodes Transistors SMD Type NPN Silicon Transistor 2SC945 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 ● High hFE linearity 0.55 ● Collector current up to 150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ■ Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector to base voltage Parameter VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 150 mA power dissipation PC 200 mW Tj 150 ℃ Tstg -55 to +150 ℃ Junction temperature Storage temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Testconditons Min Typ Max Unit IC=100 μA, IE=0 60 V(BR)CEO IC=1mA , IB=0 50 V V(BR)EBO IE=100 μA, IC=0 5 V Collector cutoff current ICBO VCB = 60V, IE = 0 Emitter cutoff current IEBO DC current gain hFE V VEB = 5.0 V, IC = 0 VCE = 6.0V, IC =1.0mA 130 VCE = 6.0V, IC =0.1mA 40 0.1 μA 0.1 μA 400 Collector saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V Base saturation voltage VBE(sat) IC=100mA,IB=10mA 1.0 V VCB = 10 V, IE = 0 , f = 1 MHz 3.0 pF Collector to base capacitance Cob Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 4 150 10 dB MHz www.kexin.com.cn 1 Transistors Diodes SMD Type 2SC945 2 www.kexin.com.cn