Transistors IC SMD Type Silicon NPN Epitaxial 2SC3265 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain: hFE (1) = 100320. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low saturation voltage: VCE (sat) = 0.4 V (max) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 (IC = 500 mA, IB = 20 mA). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current Emitter cut-off current Testconditons ICBO VCB = 30 V, IE = 0 IEBO VEB = 50 V, IC = 0 Min Typ Max Unit 0.1 ìA 0.1 ìA Collector-emitter breakdown voltage V(BR) CEO IC = 10 mA, IB = 0 25 V Emitter-base breakdown voltage V(BR) EBO IE = 0.1 mA, IC = 0 5 V DC current gain hFE VCE = 1 V, IC = 100 mA 100 320 VCE (sat) IC = 500 mA, IB = 20 mA Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance V 0.8 V VBE VCE = 1 V, IC = 10 mA fT VCE = 5 V, IC = 10 mA 120 MHz VCB = 10 V, IE = 0, f = 1 MHz 13 pF Cob 0.5 0.4 hFE Classification Marking hFE EO 100 200 EY 160 320 www.kexin.com.cn 1