KEXIN 2SC2619

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC2619
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
High frequency amplifier.
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
30
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
Collector cutoff current
ICBO
VCB = 20V, IE=0
0.5
ìA
Emitter cutoff current
IEBO
VEB = 2V, IC=0
0.5
ìA
DC current gain
hFE
VCE = 12V , IC = 2mA
Collector-emitter saturation voltage
Base-emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figure
60
200
VCE(sat) IC = 10mA , IB = 1mA
1.1
V
VBE
VCE = 12V , IC = 2mA
0.75
V
fT
VCE = 12V , IC = 2mA
Cob
VCB = 10V , IE=0, f = 1MHz
NF
VCE = 6V, IC = 2mA, f = 1MHz, Rg =
500Ù
230
MHz
3.5
5
pF
dB
hFE Classification
Marking
FB
FC
hFE
60 120
100 200
www.kexin.com.cn
1