Transistors SMD Type Epitaxial Planar PNP Transistor KTA1504S-Y SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ■ Features 1 0.55 ● Collector Current: IC=-150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=150mW 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ℃ Tstg -55 to 150 ℃ Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector Cut-off Current ICBO VCB=-50V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency hFE VCE=-6V, IC=-2mA 120 VCE(sat) IC=-100mA, IB=-10mA fT VCE=-10V, IC=-1mA -0.1 μA -0.1 μA 240 -0.1 -0.3 80 V MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 4.0 7.0 pF Noise Figure NF VCE=-6V, IC=-0.1mA,f=1kHz, Rg=10KΩ 1.0 10 dB www.kexin.com.cn 1