1N5338B
THRU
1N5388B
KI SEMICONDUCTOR
Features
x
•
•
•
•
•
Zener Voltage From 5.1V to 200V
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
5 Watt
Zener Diode
5.1 to 200 Volts
Lead Free Finish/RoHS Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Marking : Cathode band and type number
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings:
x
x
x
x
x
x
DO-15
Operating Temperature: -55qC to +150qC
Storage Temperature: -55qC to +150qC
5 Watt DC Power Dissipation
Maximum Forward Voltage @ 1A: 1.2 Volts
Power Derating: 67 mW/к Above 75к
Maximum thermal resistence: 25C/W from junction to ambient
Mechanical Data
D
Case: JEDEC DO-15.
Terminals: Solder plated , solderable per MIL-STD-750,
Method 2026.
Standard Packaging: 52mm tape
A
Cathode
Mark
B
D
C
DIMENSIONS
DIM
A
B
C
D
Note:
INCHES
MIN
.230
.104
.026
1.000
MAX
.300
.140
.034
---
MM
MIN
5.80
2.60
.70
25.40
MAX
7.60
3.60
.90
---
NOTE
1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
KI SEMICONDUCTOR
1N5338B THRU 1N5388B
ELECTRICAL CHARACTERISTICS (T A=25 qC unless otherwise noted, VF=1.2 Max @ IF=1A for all types)
MCC PART
NUMBER
REGULATOR
VOLTAGE
VZ
TEST
CURRENT
IZ
MAXIMUM
DYNAMIC
IMPEDANCE
ZZT
MAXIMUM
REVERSE
CURRENT
IR
A
TEST
VOLTAGE
VR
MAXIMUM
REGULATOR
CURRENT
IZM
MAXIMUM
DYNAMIC
KNEE
IMPEDANCE
[email protected]
MAXIMUM
SURGE
CURRENT
IZSM
MAXIMUM
VOLTAGE
REGULATION
VOLTS
mA
OHMS
VOLTS
mA
OHMS
A
VOLTS
1N5338B
5.1
240
1.5
1
1
930
400
14.4
0.39
1N5339B
5.6
220
1
1
2
865
400
13.4
0.25
1N5340B
6
200
1
1
3
790
300
12.7
0.19
1N5341B
6.2
200
1
1
3
765
200
12.4
0.1
1N5342B
6.8
175
1
10
5.2
700
200
11.5
0.15
1N5343B
7.5
175
1.5
10
5.7
630
200
10.7
0.15
1N5344B
8.2
150
1.5
10
6.2
580
200
10
0.2
1N5345B
8.7
150
2
10
6.6
545
200
9.5
0.2
1N5346B
9.1
150
2
7.5
6.9
520
150
9.2
0.22
1N5347B
10
125
2
5
7.6
475
125
8.6
0.22
1N5348B
11
125
2.5
5
8.4
430
125
8
0.25
0.25
1N5349B
12
100
2.5
2
9.1
395
125
7.5
1N5350B
13
100
2.5
1
9.9
365
100
7
0.25
1N5351B
14
100
2.5
1
10.6
340
75
6.7
0.25
1N5352B
15
75
2.5
1
11.5
315
75
6.3
0.25
1N5353B
16
75
2.5
1
12.2
295
75
6
0.3
1N5354B
17
70
2.5
0.5
12.9
280
75
5.8
0.35
1N5355B
18
65
2.5
0.5
13.7
264
75
5.5
0.4
1N5356B
19
65
3
0.5
14.4
250
75
5.3
0.4
1N5357B
20
65
3
0.5
15.2
237
75
5.1
0.4
1N5358B
22
50
3.5
0.5
16.7
216
75
4.7
0.45
1N5359B
24
50
3.5
0.5
18.2
198
100
4.4
0.55
1N5360B
25
50
4
0.5
19
190
110
4.3
0.55
1N5361B
27
50
5
0.5
20.6
176
120
4.1
0.6
1N5362B
28
50
6
0.5
21.2
170
130
3.9
0.6
1N5363B
30
40
8
0.5
22.8
158
140
3.7
0.6
1N5364B
33
40
10
0.5
25.1
144
150
3.5
0.6
1N5365B
36
30
11
0.5
27.4
132
160
3.3
0.65
1N5366B
39
30
14
0.5
29.7
122
170
3.1
0.65
1N5367B
43
30
20
0.5
32.7
110
190
2.8
0.7
1N5368B
47
25
25
0.5
35.8
100
210
2.7
0.8
0.9
1N5369B
51
25
27
0.5
38.8
93
230
2.5
1N5370B
56
20
35
0.5
42.6
86
280
2.3
1
1N5371B
60
20
40
0.5
45.5
79
350
2.2
1.2
1N5372B
62
20
42
0.5
47.1
76
400
2.1
1.35
1N5373B
68
20
44
0.5
51.7
70
500
2
1.5
1N5374B
75
20
45
0.5
56
63
620
1.9
1.6
1N5375B
82
15
65
0.5
62.2
58
720
1.8
1.8
1N5376B
87
15
75
0.5
66
54.5
760
1.7
2
1N5377B
91
15
75
0.5
69.2
52.5
760
1.6
2.2
1N5378B
100
12
90
0.5
76
47.5
800
1.5
2.3
1N5379B
110
12
125
0.5
83.6
43
1000
1.4
2.5
1N5380B
120
10
170
0.5
91.2
39.5
1150
1.3
2.5
1N5381B
130
10
190
0.5
98.8
36.6
1250
1.2
2.5
2.5
1N5382B
140
8
230
0.5
106
34
1500
1.2
1N5383B
150
8
330
0.5
114
31.6
1500
1.1
3
1N5384B
160
8
350
0.5
122
29.4
1650
1.1
3
1N5385B
170
8
380
0.5
129
28
1750
1
3
1N5386B
180
5
430
0.5
137
26.4
1750
1
4
1N5387B
190
5
450
0.5
144
25
1850
0.9
5
1N5388B
200
5
480
0.5
152
23.6
1850
0.9
5
NOTE:
1. TOLERANCE AND VOLTAGE DESIGNATION - The JEDEC type numbers shown indicate a tolerance of+/-10% with
guaranteed limits on only Vz, IR, Ir, and VF as shown in the electrical characteristics table. Units with guaranteed limits
on all seven parameters are indicated by suffix “B” for+/-5% tolerance.
2. ZENER VOLTAGE (Vz) AND IMPEDANCE (ZZT & ZZK) - Test conditions for Zener voltage and impedance are as
follows; Iz is applied 40+/-10 ms prior to reading. Mounting contacts are located from the inside edge of mounting
o
clips to the body of the diode(Ta=25 C)
KI SEMICONDUCTOR
1N5338B THRU 1N5388B
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on
logarithmic paper. Examples of this, using the 6.8v , is shown in Figure 6. Mounting
contact located as specified in Note 3. (TA=25 ć ).
4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40+/- 10 ms.
(TA=25C ). Mounting contact located as specified in Note2.
5. MAXIMUM REGULATOR CURRENT (IZM) - The maximum current shown is based on the maximum voltage of a
5% type unit. Therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the
value of 5 watts divided by the actual Vz of the device. TL=75Cat maximum from the device body.
APPLICATION NOTE:
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
qLA is the lead‐to‐ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD
For worst‐case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power‐pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
KI SEMICONDUCTOR
RATING AND CHARACTERISTICS CURVES
1N5338B THRU 1N5388B
θVZ , TEMPERATURE COEFFICIENT
(mV/°C) @ I ZT
PD, MAXIUMU POWER DISSIPATION (WATTS)
TEMPERATURE COEFFICIENTS
8
6
4
2
0
0
20
40
60
80
100
300
200
100
RANGE
50
30
20
10
5
0
20 40 60
80 100 120 140 160 180 200 220
VZ, ZENER VOLTAGE @IZT (VOLTS)
120
TL, LEAD TEMPERATURE
θ JL (t, D), TRANSIENT THERMAL RESISTANCE
JUNCTION‐TO‐LEAD ( °C/W)
Fig. 1-POWER TEMPERATURE DERATING CURVE
Fig. 2-TEMPERATURE COEFFICIENT-RANGE FOR UNITS
6 TO 51 VOLTS
20
10
D = 0.5
5
D = 0.2
2
1
PPK
t1
D = 0.1
t2
D = 0.05
D = 0.01
DUTY CYCLE, D = t1/t2
SINGLE PULSE D TJL = qJL(t)PPK
REPETITIVE PULSES D TJL = qJL(t, D)PPK
NOTE: BELOW 0.1 SECOND, THERMAL
NOTE: RESPONSE CURVE IS APPLICABLE
NOTE: TO ANY LEAD LENGTH (L).
0.5
D=0
0.2
0.001
0.005 0.01
0.05
0.1
0.5
1
5
10
20
50
100
t, TIME (SECONDS)
40
30
20
MOUNT ON 8.0mm
COPPER PADS TO
EACH TERMINAL
2
10
0
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Fig. 4-TYPICAL THERMAL RESISTANCE
IR, PEAK SURGE CURRENT (AMPS)
JL, JUNCTION-TO -LEAD THERMAL
RESISTANCE (C/W)
Figure 3. Typical Thermal Response
L, Lead Length = 3/8 Inch
40
PW = 1ms*
20
PW = 8.3ms*
10
4
2
1
PW = 1000ms*
0.4
0.2
0.1
3
SINE / SQUARE WAVE PW = 100ms*
4
6
8 10
20
30 40
60 80 100
200
NOMINAL VZ(V)
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT VERSUS NOMINAL ZENER
VOLTAGE (SEE NOTE 3)
KI SEMICONDUCTOR
RATING AND CHARACTERISTICS CURVES
1N5338B THRU 1N5388B
30
20
VZ = 6.8V
IZ, ZENER CURRENT (mA)
I r , PEAK SURGE CURRENT (AMPS)
ZENER VOLTAGE VERSUS ZENER CURRENT
(FIGURES 7,8)
10
5
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 5
2
1
0.5
0.2
0.1
TC = 25
100
10
1
0.1
1
10
100
T = 25
1000
1000
1
2
3
4
5
6
7
8
9
10
VZ, ZENER VOLTAGE (VOLTS)
Fig. 6-PEAK SURGE CURRENT VERSUS PULSE
WIDTH(SEE NOTE 3)
Fig. 7-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 6.8 THRU 10 VOLTS
IZ, ZENER CURRENT (mA)
1000
T = 25
100
10
1
0.1
10
20
30
40
50
60
70
80
VZ, ZENER VOLTAGE (VOLTS)
Fig. 8-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 11 THRU 51 VOLTS
*** Data of Figure 3 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure. 5 be
exceeded
KI SEMICONDUCTOR