PNP S I L I C O N T R A N S I S T O R K I SEMICONDUCTOR A733 █ APPLICATIONS The H733 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………250mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………-60V VCEO——Collector-Emitter Voltage……………………………-50V V EBO ——Emitter-Base Voltage………………………………-5V IC ——Collector Current……………………………………-150mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -60 V IC=-100μA, BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-10mA, BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA，IC=0 DC Current Gain 90 HFE VCE(sat) Collector- Emitter Saturation Voltage VBE(ON) Base-Emitter On Voltage 600 -0.5 IE=0 IB=0 VCE=-6V, IC=-1mA -0.3 V IC=-100mA, IB=-10mA -0.8 V VCE=-6V, IC=-1mA ICBO Collector Cut-off Current -100 nA VCB=-60V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V, IC=0 fT Cob Current Gain-Bandwidth Product 180 MHz Output Capacitance 4.5 pF VCE=-6V, IC=-10mA VCB=-10V, IE=0 ， f=1MHz █ hFE Classification R Q P 90—180 135—270 200—400 K 300—600