NPN S I L I C O N T RA N S I S T O R K I SEMICONDUCTOR C3203 █ APPLICATIONS HIGH CURRENT APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………600mW 1―Emitter，E 2―Collector，C 3―Base，B V CBO——Collector-Base Voltage………………………………35V VCEO——Collector-Emitter Voltage……………………………30V V EBO ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………800mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 35 V IC=100μA, BVCEO Collector-Emitter Breakdown Voltage 30 V IC=10mA, BVEBO Emitter-Base Breakdown Voltage 5 V IE=1mA，IC=0 HFE（1） DC Current Gain 100 HFE（2） DC Current Gain 35 VCE(sat) Collector- Emitter Saturation Voltage 320 IE=0 IB=0 VCE=1V, IC=100mA VCE=1V, IC=700mA 05 0.5 V IC=500mA, IB=20mA 0.8 V VCE=1V, IC=10mA VBE Base-Emitter Voltage ICBO Collector Cut-off Current 100 nA VCB=35V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 fT Cob Current Gain-Bandwidth Product Output Capacitance 120 13 MHz pF █ HFE Classification O Y 100—200 160—320 VCE=5V, IC=10mA VCB=10V, IE=0，f=1MHz