KISEMICONDUCTOR C1008

NPN S I L I C O N T R A N S I S T O
R
K I SEMICONDUCTOR
C1008
█ LOW FREQUENCY AMPLIFIER MEDIUM
SPEED SWITCHING
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………800mW
1―Emitter,E
2―Base,B
3―Collector,C
V CBO——Collector-Base Voltage………………………………80V
VCEO——Collector-Emitter Voltage……………………………60V
V EBO ——Emitter-Base Voltage………………………………8V
I C ——Collector Current……………………………………700mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
ICBO
Collector Cut-off Current
100
nA
VCB=60V, IE=0
IEBO
Emitter Cut-off Current
100
nA
VEB=5V, IC=0
40
400
HFE(1)
DC Current Gain
VCE(sat)
Collector- Emitter Saturation Voltage
0.2
0.4
V
IC=500mA, IB=50mA
VBE(sat)
Base-Emitter Saturation Voltage
0.86
1.1
V
IC=500mA, IB=50mA
BVCBO
Collector-Base Breakdown Voltage
80
V
IC=100μA,
BVCEO
Collector-Emitter Breakdown Voltage
60
V
IC=10mA,
BVEBO
Emitter-Base Breakdown Voltage
8
V
IE=10μA,IC=0
fT
Current Gain-Bandwidth Product
30
Cob
Output Capacitance
VCE=2V, IC=50mA
50
MHz
8
pF
40—80
O
70—140
IB=0
VCE=10V, IC=50mA
VCB=10V, IE=0,f=1MHz
█ hFE Classification
R
IE=0
Y
GR
120—240
240—400
K I SEMICONDUCTOR
C1008