NPN S I L I C O N T R A N S I S T O R K I SEMICONDUCTOR C1008 █ LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………800mW 1―Emitter，E 2―Base，B 3―Collector，C V CBO——Collector-Base Voltage………………………………80V VCEO——Collector-Emitter Voltage……………………………60V V EBO ——Emitter-Base Voltage………………………………8V I C ——Collector Current……………………………………700mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 40 400 HFE(1) DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage 0.2 0.4 V IC=500mA, IB=50mA VBE(sat) Base-Emitter Saturation Voltage 0.86 1.1 V IC=500mA, IB=50mA BVCBO Collector-Base Breakdown Voltage 80 V IC=100μA, BVCEO Collector-Emitter Breakdown Voltage 60 V IC=10mA, BVEBO Emitter-Base Breakdown Voltage 8 V IE=10μA，IC=0 fT Current Gain-Bandwidth Product 30 Cob Output Capacitance VCE=2V, IC=50mA 50 MHz 8 pF 40—80 O 70—140 IB=0 VCE=10V, IC=50mA VCB=10V, IE=0，f=1MHz █ hFE Classification R IE=0 Y GR 120—240 240—400 K I SEMICONDUCTOR C1008