KI SEMICONDUCTOR BAT46 VOLTAGE RANGE: 100 V CURRENT: 0.15 A SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpos e applications Thes e diodes features very low turn-on voltage and fas t s witching. Thes e devices are protected by a PN junction guard ring agains t exces s ive voltage, s uch as electros tatic dis charges Thes e diodes is ls o available in the SOD - 123 cas e with type des ignation BAT46W and in the MiniMELF cas e wyht type des ignations LL46 DO - 35(GLASS) MECHANICAL DATA Cas e:JEDEC DO--35,glas s cas e Polarity: Color band denotes cathode Weight: Approx. 0.13 gram ABSOLUTE RATINGS Parameter Symbol Value UNITS VR 100.0 V Repetitive peak reverse voltage Forw ard continuius current Pow er dissipation mA IFRM 350 1) mA IFSM 750 1) mA 150 1) mW @ tamb=25 Repetitive peak f orw ard current @ tp<1s, Surge f orw ard current 1) @ tp<10ms,TA=25 @ TA=65 1) 150 IF <=0.5,TA=25 P tot Thermal resistance juntion to ambient air 0.3 RθJA 1) Junction tenperature TJ 125 Ambient operating temperature range TA c-65 ---+ 125 TSTG c-65 ---+ 150 Storage temperature range ／m W ELECTRICAL CHARACTERISTICS Parameter Reverse breakdow n voltage Symbol VR Test Condition IR = 100 A(puls ed) Min. Typ. V VR = 1.5V 0.5 5.0 VR = 10V s, <2% IR 0.8 VR = 10V,Tj=60 7.5 VR = 50V 2.0 VR = 50V,Tj=60 VR = 75V s, <2% Junction capacitance Thermal resistance junction to ambient air VF 5.0 IF = 0.1m A 0.25 IF = 10m A 0.45 V 1.0 VR = 0V,f=1MHz 10 VR = 1V,f=1MHz 6 RθJA A 20.0 IF = 250m A CJ a 15.0 VR = 75V,Tj=60 Forw ard voltage pulse test tp<300 UNITS 100.0 VR = 1.5V,Tj=60 Leakage current pulse test tp<300 Max. pF 300 1) /W 1) Valid prov ided that leads at a distance of 4mm f rom case are kept at ambient temperature Document Number 0265008 KI SEMICONDUCTOR 1. RATINGS AND CHARACTERISTIC CURVES BAT46 FIG.1 -- FORWARD CURRENT VERSUS FORWARD VOLTAGE FIG.2 -- FORWARD CURRENT VERSUS FORWARD AT DIFFERENT TEMPERATURES (TYPICAL VALUES) VOLTAGE (TYPICAL VALUES) A 500 100 400 IF T J =25 IF 10 300 TJ=25 1 200 TJ=60 0.1 0.01 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 V VF 0.2 0.4 0.6 0.8 VF 1 V FIG.3 -- REVERSE CURRENT VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES) 1000 90%confidence V R =75V IR 100 max. typ. 10 1 0.1 0 25 50 75 100 125 TJ Document Number 0265008 KI SEMICONDUCTOR 2. RATINGS AND CHARACTERISTIC CURVES BAT46 FIG.4 -- REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE µs 1 00 0 12 5 10 0 IR 10 0 75 10 60 50 1 .1 25 0 20 40 60 80 10 0 V VR FIG.5 -- CAPACITANCE C VERSUS REVERSE APPLIED VOLTAGE VR (TYPICAL VALUES) pF 10 CJ Tamb=25℃ 8 6 4 2 0 20 40 60 80 100 V VR Document Number 0265008 KI SEMICONDUCTOR 3.