OPA8510HPR Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min Typ VF1 1.1 VF2 1.4 Reverse Voltage VR 5 Power PO 18 λP Wavelength Max Unit Condition V IF=10uA V IF=150mA V IR=10uA 1.6 21 mW IF=150mA 850 nm IF=50mA ∆λ 45 nm IF=50mA Rise Time Tr 11.5 ns Fall Time Tf 6.6 ns ※ Note : LED chip is mounted on TO-18 gold header without resin coating. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 38.4mil x 38.4mil --------------------- 39.4mil x 39.4mil --------------------- 100um --------------------7mil --------------------6.3mil (d) P Side Electrode 513-37 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.Knowledge-on.com N Epi P Epi (e) N Side Electrode