BL GALAXY ELECTRICAL LL103A - - - LL103C VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW SMALL SIGNAL SCHOTTKY DIODE FEATURES MINI-MELF For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage Cathode indification drop and fast switching make it ideal for protection of φ1 .5±0.1 MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications MECHANICAL DATA 0.4±0.1 3.4 +0.3 -0.1 Case:JEDEC MINI-MELF Polarity: Color band denotes cathode end Weight: Approx. 0.031 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols LL103A LL103B LL103C UNITS Peak reverse voltage VRRM 40 30 20 V Pow er dissipation (Infinite Heat Sink) Ptot 4001) Single cycle surge 60Hz sine w ave I FSM 15 A Forward continuous current I(AV) 200 mA Junction tenperature TJ 125 TSTG -55 ---+ 150 Storage temperature range mW 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Reverse breakdow n voltage @ IR=50 A LL103A LL103B LL103C Leakage current @ VR=50V LL103A,VR=30V LL103B,VR=20V LL103C,VR=10V Forw ard voltage drop @ I F=20mA I F=200mA Junction capacitance @ VR=0V,f=1MHz Reverse recovery time @ IF=IR=50mA to 200mA,recover to 0.1 IR Thermal resistance junction to ambient air Symbols Min. Typ. Max. UNITS VR 40 30 20 - - V IR - - 5.0 μA VF - - CJ trr - 50 10 0.37 0.6 - RθJA - 250 - V pF ns K/W www.galaxycn.com Document Number 0265018 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD. XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXXXXX-SCHOTTKY BARRIER LL103A - - - LL103C FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX JUNCTION GUARD RING 5 1000 1000.000 – Forward Current (A) 4 10 10.000 1 1.000 2 F 0.100 0.1 3 1 I I F – Forward Current ( mA) 100 100.000 0.010 0.01 0 0.0 0.001 0 0.5 100 200 300 400 500 600 700 800 900 1000 V F – Forward Voltage ( mV ) FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT XXXXXXXXX VARIATION TEMPERATURES 1.5 2.0 FIG.4 -- TYPICAL CAPACITANCE CURVE AS A JUNCTION OF REVERSE VOLTAGE 10000 30 CD – Diode Capacitance ( pF ) I R – Reverse Current (A ) 1.0 V F – Forward Voltage ( V ) 1000 100 10 1 f=1MHz 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Tj – Junction Temperature ( °C ) 0 5 10 15 20 25 30 V R – Reverse Voltage ( V ) www.galaxycn.com Document Number 0265018 BLGALAXY ELECTRICAL 2.