CM200DU-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts A N D P - NUTS (3 TYP) TC MEASURED POINT E C2E1 E2 C1 E2 G2 CM W Y Q (2 PLACES) F X G F G1 E1 B K M K J R H (4 PLACES) T V U T S U C L G2 E2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking RTC C2E1 C1 E2 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 3.70 B 1.89 C 1.18 +0.04/-0.02 D 3.15±0.01 Millimeters 94.0 48.0 30.0 +1.0/-0.5 80.0±0.25 Dimensions N P Q R Inches 0.28 M5 Dia. 0.26 0.02 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Millimeters 7.0 M5 6.5 Dia. 4.0 E F G H J K L 0.43 0.16 0.71 0.02 0.53 0.91 0.83 11.0 4.0 18.0 0.5 13.5 23.0 21.2 S T U V W X Y 0.30 0.63 0.10 1.0 0.94 0.51 0.47 7.5 16.0 2.5 25.0 24.0 13.0 12.0 M 0.67 17.0 Z 0.47 12.0 Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12F is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 12 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM200DU-12F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 200 Amperes ICM 400* Amperes Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) IE 200 Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 590 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Viso 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions ICES VCE = VCES, VGE = 0V Min. Typ. Max. – – 1 mA IGES VGE = VGES, VCE = 0V – – 20 μA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts IC = 200A, VGE = 15V, Tj = 125°C – 1.6 – Volts Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V – 1240 Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units – 2.6 nC Volts Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. – – Max. – – 3.6 nf – – 2 nf Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) VCC = 300V, IC = 200A, – – 120 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 100 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V 54 Units Input Capacitance nf td(off) RG = 3.1, – – 350 ns tf Inductive Load – – 250 ns Diode Reverse Recovery Time** trr Switching Operation – – 150 ns Diode Reverse Recovery Charge** Qrr IE = 200A – 3.8 – μC Typ. Max. Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference – Units 0.21 °C/W 0.35 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference – – – 0.13 – 0.045 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). – °C/W 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 11 15 10 3 9.5 VGE = 20V 300 9 200 8.5 100 8 7.5 0 1 2 3 2 1 0 4 0 100 300 200 IC = 80A 1 0 400 IC = 200A 0 6 10 12 14 8 16 18 20 CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 102 101 0 1.0 2.0 3.0 tf 101 Coes 100 100 101 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE 101 VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 25°C Inductive Load 100 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 tr 101 IC = 200A 16 VCC = 200V VCC = 300V 12 8 4 0 0 600 1200 GATE CHARGE, QG, (nC) 100 100 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Irr t rr td(on) VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 125°C Inductive Load VGE = 0V EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 102 Cres 10-1 10-1 4.0 td(off) SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) Cies REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER CURRENT, IE, (AMPERES) IC = 400A 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 REVERSE RECOVERY TIME, trr, (ns) 3 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Tj = 25°C 4 4 COLLECTOR-CURRENT, IC, (AMPERES) 103 100 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 1800 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 0 5 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 Per Unit Base Rth(j-c) = 0.21°C/W (IGBT) Rth(j-c) = 0.35°C/W (FWDi) Single Pulse TC = 25°C 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3