CM75TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 75 Amperes/1200 Volts J S - NUTS (5 TYP) T (4 TYP.) K K R CM P N P GUP EUP L GVP EVP N L GWP EWP N L B E Q M GVN EVN GUN EUN TC MEASURING POINT U TC MEASURING POINT W V J GWN EWN J L L N L N D A V W - THICK x X - WIDE TAB (12 PLACES) W - THICK x X - WIDE TAB (12 PLACES) H C F G P RTC RTC RTC EWP EVP EUP GWN GVN RTC RTC EVN EUN N A W V U GUN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking GWP GVP GUP RTC EWN Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.21 107.0 M 0.57 14.4 4.02 102.0 N 0.85 21.7 P 0.67 17.0 48.5 B C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.54±0.01 90.0±0.25 Q 1.91 E 3.15±0.01 80.0±0.25 R 0.15 F 0.16 4.0 S G 1.02 26.0 T 0.22 Dia. M5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Millimeters 3.75 Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75TU-24F is a 1200V (VCES), 75 Ampere SixIGBT IGBTMOD™ Power Module. M5 5.5 Dia. H 0.31 8.1 V 0.03 0.8 J 0.91 23.0 W 0.02 0.5 K 0.47 12.0 X 0.110 2.79 L 0.43 11.0 Type Current Rating Amperes VCES Volts (x 50) CM 75 24 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-24F Trench Gate Design Six IGBTMOD™ 75Amperes/1200Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM75TU-24F Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 450 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 680 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Max. Collector-Cutoff Current Symbol ICES VCE = VCES, VGE = 0V Test Conditions – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts IC = 75A, VGE = 15V, Tj = 125°C – 1.9 – Volts Total Gate Charge QG VCC = 600V, IC = 75A, VGE = 15V – 825 – nC Emitter-Collector Voltage** VEC IE = 75A, VGE = 0V – – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Units 3.2 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-24F Trench Gate Design Six IGBTMOD™ 75Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Min. Typ. Max. – – 29 – – Reverse Transfer Capacitance Cres – – Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 75A, – – Load Rise Time tr VGE1 = VGE2 = 15V, – Switch Turn-off Delay Time td(off) RG = 4.2⍀, – Times Fall Time 1.3 0.75 Units nf nf nf 100 ns – 50 ns – 400 ns tf Inductive Load – – 300 ns Diode Reverse Recovery Time** trr Switching Operation – – 150 ns Diode Reverse Recovery Charge** Qrr IE = 75A – 3.1 – µC Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/6 Module, Tc Reference – Units 0.28 °C/W 0.47 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/6 Module, Tc Reference – – – 0.19 – 0.015 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-24F Trench Gate Design Six IGBTMOD™ 75Amperes/1200Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 125 9 100 75 8.5 50 8 25 0 0 1 2 3 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3 10 9.5 11 15 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 15V Tj = 25°C Tj = 125°C 2 1 0 4 Tj = 25°C 4 3 IC = 150A IC = 75A 2 IC = 30A 1 0 0 30 60 90 120 0 150 16 18 20 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 101 SWITCHING TIME, (ns) 102 Cies 101 100 0 1.0 2.0 3.0 10-1 10-1 4.0 100 101 GATE CHARGE, VGE 101 101 VCC = 600V VGE = ±15V RG = 4.2 Ω Tj = 25°C Inductive Load 100 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) trr REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 td(on) tr 101 IC = 75A 16 VCC = 400V VCC = 600V 12 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Irr td(off) Cres EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 tf VCC = 600V VGE = ±15V RG = 4.2 Ω Tj = 125°C Inductive Load Coes VGE = 0V 100 102 8 4 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Tj = 25°C REVERSE RECOVERY TIME, trr, (ns) 8 COLLECTOR-CURRENT, IC, (AMPERES) 103 4 6 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 0 0 200 400 600 800 1000 1200 GATE CHARGE, QG, (nC) 101 Per Unit Base Rth(j-c) = 0.28°C/W (IGBT) Rth(j-c) = 0.47°C/W (FWDi) Single Pulse TC = 25°C 10-5 TIME, (s) 10-4 10-3 10-3