CM200DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ NF-Series Module 200 Amperes/600 Volts TC MEASURED POINT (BASEPLATE) A F F E E G2 G E2 B J N C2E1 E2 C1 H E1 G G1 K K L (2 PLACES) K M NUTS (3 PLACES) D P P Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. T THICK U WIDTH P Q S C V LABEL R G2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 48.0 B C 1.89 1.14+0.04/-0.02 29.0+1.0/-0.5 Dimensions Inches Millimeters L 0.26 Dia. Dia. 6.5 M M5 Metric M5 N 0.79 20.0 0.63 16.0 D 3.15±0.01 80.0±0.25 P E 0.67 17.0 Q 0.28 7.0 0.83 21.2 F 0.91 23.0 R G 0.16 4.0 S 0.30 7.5 0.02 0.5 H 0.71 18.0 T J 0.51 13.0 U 0.110 2.8 12.0 V 0.16 4.0 K 0.47 Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY-12NF is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 12 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DY-12NF Dual IGBTMOD™ NF-Series Module 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DY-12NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current*** (DC, TC' = 93°C) Peak Collector Current IC 200 Amperes ICM 400* Amperes Emitter Current** (TC = 25°C) IE 200 Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 650 Watts Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 310 Grams VISO 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed TjMAX rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.0 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts IC = 200A, VGE = 15V, Tj = 125°C — 1.7 — Volts Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 800 — nC Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V — — 2.6 Volts Min. Typ. Max. Units — — 30 nf Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Test Conditions VCE = 10V, VGE = 0V — 3.7 nf — 1.2 nf — — 120 ns tr VCC = 300V, IC = 200A, — — 120 ns td(off) VGE1 = VGE2 = 15V, RG = 3.1Ω, — — 300 ns tf Inductive Load — — 300 ns Diode Reverse Recovery Time** trr Switching Operation, — — 150 ns Diode Reverse Recovery Charge** Qrr IE = 200A — 3.5 — µC Switch Turn-off Delay Time Time Fall Time *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi) ***Tc' measured point is just under chips. If this value is used, Rth(f-a) should be measured just under chips 2 — — Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DY-12NF Dual IGBTMOD™ NF-Series Module 200 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.19 °C/W — — 0.35 °C/W — — 0.13 °C/W — 0.07 — °C/W 3.1 — 31 Ω Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c')Q Per IGBT 1/2 Module, TC Reference Point Under Chips Contact Thermal Resistance Rth(c-f) External Gate Resistance 15 12 300 200 11 100 10 8 9 0 VGE = 15V Tj = 25°C Tj = 125°C 3 2 1 2 4 6 8 10 100 0 8 IC = 400A 6 IC = 200A IC = 80A 4 2 200 300 6 400 8 10 12 14 16 18 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C Tj = 125°C 102 101 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 tf td(off) Cies 101 Coes 100 102 td(on) tr 101 VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load Cres 10-1 10-1 20 103 VGE = 0V SWITCHING TIME, (ns) 103 0 Tj = 25°C 0 0 0 EMITTER CURRENT, IE, (AMPERES) 10 4 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 400 Per 1/2 Module, Thermal Grease Applied RG 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DY-12NF Dual IGBTMOD™ NF-Series Module 200 Amperes/600 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr trr SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE) 101 101 102 102 IC = 200A 16 VCC = 300V 12 8 4 0 200 0 400 600 800 1000 1200 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) VCC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive Load C Snubber at Bus 100 10-1 101 10-2 ESW(on) ESW(off) 100 100 VCC = 200V EMITTER CURRENT, IE, (AMPERES) 101 GATE RESISTANCE, RG, (Ω) 4 101 103 102 SWITCHING LOSS, ESW( on), ESW( off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive Load NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth ¥ (NORMALIZED VALUE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 10-3 10-2 10-1 100 101 10-2 10-3 10-5 TIME, (s) 10-4 VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 10-1 101 102 COLLECTOR CURRENT, IC, (AMPERES) 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W (IGBT) Rth(j-c) = 0.35°C/W (FWDi) 101 10-3 10-3 103