CM300DY-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ NF-Series Module 300 Amperes/1200 Volts TC MEASURED POINT (BASEPLATE) A F F W G2 B E H E1 C2E1 L (4 PLACES) G E2 J N E2 K C1 K G G1 K M NUTS (3 PLACES) D P Q P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Q T THICK U WIDTH P S C V LABEL R Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 4.33 Dimensions Inches 110.0 M M6 Metric M6 80.0 N 1.18 30.0 Millimeters Millimeters Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies D 3.66±0.01 93.0±0.25 Q E 2.44±0.01 62.0±0.25 R 0.83 21.2 S 0.33 8.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-24NF is a 1200V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 24 B C 3.15 1.14+0.04/-0.02 29.0+1.0/-0.5 P 0.71 18.0 0.28 7.0 F 0.98 25.0 G 0.24 6.0 T 0.02 0.5 0.110 2.8 H 0.59 15.0 U J 0.81 20.5 V 0.16 4.0 K 0.55 14.0 W 0.85 21.5 L 0.26 Dia. Dia. 6.5 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24NF Dual IGBTMOD™ NF-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DY-24NF Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 300 Amperes ICM 600* Amperes IE 300 Amperes Collector Current*** (DC, TC´ = 111°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts Mounting Torque, M6 MainTerminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 580 Grams VISO 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 1.8 2.5 Volts IC = 300A, VGE = 15V, Tj = 125°C — 2.0 — Volts Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 2000 — nC Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — — 3.2 Volts Min. Typ. Max. Units — — 70 nf — — Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VCE = 10V, VGE = 0V Cres — — Inductive Turn-on Delay Time td(on) — — 500 ns Load Rise Time Switch Turn-off Delay Time Time Fall Time Diode Reverse Recovery Charge** 1.4 nf Reverse Transfer Capacitance Diode Reverse Recovery Time** nf tr VCC = 600V, IC = 300A, — — 120 ns td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 600 ns tf Inductive Load — — 350 ns trr Switching Operation, — — 250 ns — 13 — µC Qrr IE = 300A *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC´ measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips. 2 6.0 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24NF Dual IGBTMOD™ NF-Series Module 300 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W — — 0.18 °C/W — — 0.046 °C/W — 0.02 — °C/W 1.0 — 10 Ω Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)’Q Per IGBT 1/2 Module, TC Reference Point Under Chips Contact Thermal Resistance Rth(c-f) External Gate Resistance 13 11 300 10 150 9 0 2 4 6 8 2 1 0 10 150 0 300 450 8 IC = 600A 6 IC = 300A IC = 120A 4 2 0 600 Tj = 25°C 6 10 8 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 CAPACITANCE, Cies, Coes, Cres, (nF) 102 103 Cies tf td(on) 101 Coes 100 Cres 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 20 td(off) 102 tr 101 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load VGE = 0V 0 18 COLLECTOR-CURRENT, IC, (AMPERES) Tj = 25°C Tj = 125°C 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 3 SWITCHING TIME, (ns) 0 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 450 10 4 Tj = 25oC 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 600 Per 1/2 Module, Thermal Grease Applied RG 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24NF Dual IGBTMOD™ NF-Series Module 300 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 600V VGE = 15V RG = 1.0Ω Tj = 25°C Inductive Load 103 SWITCHING LOSS, ESW( on) , ESW( off) , (mJ/PULSE) 101 101 101 103 102 VCC = 400V 12 VCC = 600V 8 4 0 500 1000 1500 2000 2500 3000 0 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-1 10-2 ESW(on) ESW(off) 101 GATE RESISTANCE, RG, (Ω) 4 16 GATE CHARGE, QG, (nC) 102 101 100 IC = 300A EMITTER CURRENT, IE, (AMPERES) VCC = 600V VGE = 15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus 102 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 Irr trr NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 10-3 10-3 10-2 10-1 100 101 10-2 10-5 TIME, (s) 10-4 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus 101 ESW(on) ESW(off) 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W (IGBT) Rth(j-c) = 0.18°C/W (FWDi) 102 10-3 10-3 103