MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 175 °C/W 1 = Emitter 2 = Base 3 = Collector NONE CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 20 V BVCBO IC = 1.0 mA 30 V BVEBO IC = 100 µA 3.5 V ICBO VCB = 10 V IEBO VEB = 3.5 V hFE VCE = 5.0 V VCE(SAT) IC = 50 mA ft VCE = 14 V IC = 90 mA VCC = 14 V f = 300 MHz IC = 90 mA GUmax MAG |S21| 2 µA 50 IC = 50 mA 50 IB = 10 mA 100 µA 300 --- 100 V f = 300 MHz 3.0 GHz Pout = 1.0 W 11.5 dB 11.7 dB 11.13 dB 10 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.