Product specification 2SA811A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain * hFE Collector-emitter saturation voltage * Testconditons VEB = -5V, IC=0 VCE = -6V , IC = -1mA 135 500 VCE = -6V , IC = -0.1mA 100 500 VCE(sat) IC = -10mA , IB = -1mA VBE VCE = -6V , IC = -1mA Gain bandwidth product fT VCE = -6V , IE = 1mA * Pulse test: tp Cob 350 ìs; d Typ VCB = -120V, IE=0 Base-emitter voltage * Output capacitance Min VCB = -30V , IE = 0 , f = 1.0MHz Max Unit -50 nA -50 nA 900 -0.09 -0.30 V -0.55 -0.61 -0.65 V 50 90 2.0 MHz 3.0 pF 0.02. hFE Classification Marking C15 C16 C17 hFE 135 270 200 400 300 600 http://www.twtysemi.com C18 450 900 [email protected] 4008-318-123 1 of 1