TYSEMI 2SB1475

Product specification
2SB1475
Features
Super miniature package.
High DC current IC(DC)=500mA max.
Low VCE(sat): VCE(sat)=-60mV at -100mA
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-25
V
Collector to emitter voltage
VCEO
-16
V
Emitter to base voltage
VEBO
-6
V
Collector current
IC
-500
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -16 V, IE = 0
Testconditons
Min
-100
nA
Emitter cutoff current
IEBO
VEB = -6.0 V, IC = 0
-100
nA
DC current gain *
hFE
VCE = -1.0 V, IC = -100 mA
110
IC = -100 mA, IB = -10 mA
Collector saturation voltage *
VCE(sat)
Base saturation voltage *
VBE(sat) IC = -2A, IB = -0.1A
IC = -500 mA, IB = -20 mA
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
VBE
VCE = -1.0 V, IC = -10 mA
fT
VCE = -3.0 V, IE = 100 mA
Cob
350 µs, duty cycle
Typ
200
400
-60
-120
mV
-250
-400
mV
-0.95
-1.2
V
-0.66
-0.7
V
50
VCB = -10 V, IE = 0 , f = 1.0 MHz
MHz
15
pF
2%
hFE Classification
Marking
B42
B43
B44
hFE
110 240
190 320
270 400
http://www.twtysemi.com
[email protected]
4008-318-123
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