TYSEMI 2SD780A

IC
SMD Type
Product specification
2SD780A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).
1
0.55
Micro package.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5.0
V
Collector current
IC
300
A
Total power dissipation at 25
ambient temperature
PT
200
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
100
nA
DC current gain *
hFE
VCE = 1.0 V, IC = 50 mA
110
200
400
Base to emitter voltage *
VBE
VCE = 6.0 V, IC = 10 mA
600
645
700
mV
0.15
0.6
V
Collector saturation voltage *
Output capacitance
Cob
350 ìs, duty cycle
Min
VCE(sat) IC = 300 mA, IB = 30 mA
Gain bandwidth product
* Pulsed: PW
Testconditons
fT
Typ
VCB = 6.0 V, IE = 0 , f = 1.0 MHz
7.0
pF
VCE = 6.0 V, IE = -10 mA
140
MHz
2%
hFE Classification
Marking
D51
D52
D53
D54
D55
hFE
110 180
135 220
170 270
200 320
250 400
http://www.twtysemi.com
[email protected]
4008-318-123
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