Product specification 2SB1266 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Suitable for sets whose heighit is restricted. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High reliability. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector current (pulse) ICP -8 A Collector dissipation PC TC = 25 1.65 W 30 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -40V , IE = 0 -100 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -100 ìA DC current Gain hFE Gain bandwidth product Output capacitance Collector-emitter saturation voltage VCE = -5V , IC = -0.5A 70 VCE = -5V , IC = -3A 20 fT VCE = -5V , IC = -0.5A 8 MHz Cob VCB = -10V , f = 1MHz 60 pF VCE(sat) IC = -2A , IB = -0.2A Base-emitter voltage 280 VBE ICE = -5V , IC = -0.5A -0.4 -1 V -0.7 -1 V Collector-to-base breakdown voltage V(BR)CBO IC = -1mA , IE = 0 -60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -5mA , RBE = -60 V Emitter-to-base breakdown voltage V(BR)EBO IE = -1mA , IC = 0 -6 V hFE Classification Rank Q R S hFE 70 140 100 200 140 280 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1