TYSEMI 2SC4555

IC
SMD Type
Product specification
2SC4555
Features
Very small-sized package
Low collector-to-emitter saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
20
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector current(Pulse)
ICP
1
A
mW
Collector dissipation
PC
150
Junction temperature
Tj
105
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Collector cutoff current
ICBO
VCB = 15V, IE=0
Emitter cutoff current
IEBO
VEB = 4V, IC=0
DC current gain
hFE
VCE = 2V , IC = 10mA
fT
VCE = 2V , IC = 50mA
300
VCB = 10V, f = 1MHz
4.0
Gain bandwidth product
Output capacitance
Cob
Collector-to-emitter saturation voltage
VCE(sat)
135
Unit
0.1
ìA
0.1
ìA
600
IC = 5mA , IB = 0.5mA
MHz
pF
30
IC = 200mA , IB = 10mA
VBE(sat) IC = 200mA , IB = 10mA
Base-to-emitter saturation voltage
Max
160
300
0.95
1.2
V
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
20
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
15
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
hFE Classification
UT
Marking
Rank
5
6
7
hFE
135 270
200 400
300 600
http://www.twtysemi.com
[email protected]
4008-318-123
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