Product specification 2SB1295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features Very small-sized package permitting sets to be made 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low collector to emitter saturation voltage. 0.4 3 Large current capacity. 2 smaller and slimer. +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V Collector current IC -0.8 A Collector current (pulse) ICP -3 A Collector dissipation PC 200 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = -12V , IE = 0 Emitter cutoff current IEBO VEB = -4V , IC = 0 DC current Gain hFE VCE = -2V , IC = -50mA fT VCE = -2V , IC = -50mA Cob VCB = -10V , f = 1MHz Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Min Typ 135 Max Unit -100 nA -100 nA 600 300 MHz 15 pF VCE(sat) IC = -5mA , IB = -0.5mA -10 -25 mV VCE(sat) IC = -400mA , IB = -20mA -100 -200 mV -0.9 -1.2 V VBE(sat) IC = -400mA , IB =-20mA Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -15 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -15 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V hFE Classification UL Marking Rank hFE 5 135 6 270 http://www.twtysemi.com 200 7 400 300 600 [email protected] 4008-318-123 1 of 1