Product specification 2SB805 Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -5 V IC -0.7 A Collector current (pulse) *1 IC(pu) -1.2 A Collector power dissipation Pc 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current *1. PW 10ms,duty cycle 50% Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -100V, IE=0 Testconditons Min Typ -100 nA Emitter cutoff current IEBO VEB = -5V, IC=0 -100 nA DC current gain * hFE VCE =-1V , IC = -100mA 90 200 VCE =-1V , IC = -5.0mA 45 200 Collector-emitter saturation voltage * VCE(sat) IC = -500mA , IB = -50mA Base-emitter saturation voltage * VBE(sat) IC = -500mA , IB = -50mA -0.4 -0.6 V -0.9 -1.5 V -620 -650 mV Base-emitter voltage * VBE VCE =-10V , IC = -10mA Output capacitance Cob VCB = -10V , IE = 0 , f = 1.0MHz 14 pF Transition frequency fT VCE = -10V , IE = 10mA 75 MHz * PW -550 400 350ìs,duty cycle 2% hFE Classification Marking hFE KM 90 180 http://www.twtysemi.com KL 135 270 KK 200 400 [email protected] 4008-318-123 1 of 1