SMD Type Product specification KC817(BC817) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain. 0-0.1 +0.1 0.38-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 800 mA power dissipation PD 310 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-to-base breakdown voltage VCBO IC = 10 50 V Collector-to-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 45 V 5 A,VBE = 0 Emitter-to-base breakdown voltage VEBO IE = 10 Collector cutoff current ICES VCB = 25 V, VBE= 0 100 nA Emitter cutoff current IEBO VEB = 4 V, IC = 0 100 nA DC current gain * hFE A, IC = 0 IC = 100 mA, VCE = 1 V 100 IC = 300 mA, VCE = 1 V 60 V 630 Collector saturation voltage * VCE(sat) IC = 500 mA, IB = 50 mA 0.7 Base emitter on voltage VBE(on) VCE=1V,IC=300mA 1.2 V 12 pF Output Capacitance Cob Transition frequency * Pulsed: PW fT 350 ìs, duty cycle VCB=10V,f=1MHz IC = 10 mA, VCE = 5 V, f = 50 MHz 100 V MHz 2% Marking NO. KC817-16 KC817-25 KC817-40 Marking 8FA 8FB 8FC hFE 100 250 160 400 250 630 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1