Transistors SMD Type Product specification 2SC3728 Features High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol Rating Unit VCBO 20 V Emitter-base voltage VEBO 6 V Collector-emitter voltage VCEO 12 V ICM 3 A Peak collector current Collector current IC 2 A Collector dissipation (Ta=25 ) PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Colllector-base breakdown voltage Testconditons V(BR)CBO IC=10ìA,IE=0 Min V(BR)EBO IE=10ìA,IC=0 6 Collector-emitter breakdown voltage V(BR)CEO IC=5mA,RBE= 12 ICBO VCB=16V,IE=0 Emitter cutoff current IEBO VEB=4V,IC=0 DC current gain hFE VCE=4V,IC=100mA 150 VCE(sat) IC=1A,IB=50mA Collector-emitter saturation voltage Gain bandwidth product fT Collector output capacitance VCE=2V,IE=-10mA Cob VCB=10V,IE=0,f=1MHz Max 20 Emitter-base breakdown voltage Collector cutoff current Typ 40 Unit V V 14 16 V 0.1 ìA 0.1 ìA 350 800 0.2 0.35 V 80 MHz 28 pF hFE Classification Marking YE YF YG hFE 150 300 250 500 400 800 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1