Transistors SMD Type Product specification 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 VCEO = 300 V 0.4 3 High breakdown voltage 1 Cob = 1.5 pF Typ. 0.55 Small Cob 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 300 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 300 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 Collector cutoff current ICBO Collector-emitter saturation voltage DC current gain Gain bandwidth product Collector output capacitance V VCB = 250V, IE=0 VCE(sat) IC = 30mA , IB = 3mA 0.1 ìA 0.5 V hFE VCE = 6V , IC = 2mA fT VCE = 6V , IC = 5mA 80 MHz VCB = 10V , IE=0, f = 1MHz 1.5 pF Cob 60 150 Marking Marking XV- http://www.twtysemi.com [email protected] 4008-318-123 1 of 1