SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE(sat)=0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Emitter-base voltage VEBO 4 V Collector-emitter voltage VCEO 20 V Peak collector current ICM 1 A Collector current IC 700 mA Collector dissipation PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Colllector-base breakdown voltage Testconditons V(BR)CBO IC=10ìA,IE=0 Min Typ Max 25 Unit V Emitter-base breakdown voltage V(BR)EBO IE=10ìA,IC=0 4 V Collector-emitter breakdown voltage V(BR)CEO IC=100ìA,RBE= 20 V Collector cutoff current ICBO VCB=25V,IE=0 Emitter cutoff current IEBO VEB=2V,IC=0 DC current gain hFE VCE=4V,IC=100mA Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=25mA Gain bandwidth product fT VCE=6V,IE=-10mA 150 1 ìA 1 ìA 800 0.2 180 0.5 V MHz hFE Classification Marking UE UF UG hFE 150 300 250 500 400 800 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1