Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO 6 V Collector-emitter voltage VCEO 50 V Peak collector current ICM 2 A Collector current IC 1 A mW Collector dissipation PC 500 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Colllector-base breakdown voltage V(BR)CBO IC=10ìA,IE=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA,IC=0 6 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,RBE= 50 V Collector cutoff current ICBO VCB=40V,IE=0 0.1 ìA Emitter cutoff current IEBO VEB=2V,IC=0 0.1 ìA DC current gain hFE VCE=6V,IC=100mA Collector-emitter saturation voltage Gain bandwidth product 1800 VCE(sat) IC=500mA,IB=10mA .15 VCE=10V,IE=-10mA 130 MHz VCB=10V,IE=0,f=1MHz 12 pF fT Collector output capacitance 600 Cob 0.5 V hFE Classification Marking RH RJ hFE 600 1200 900 1800 www.kexin.com.cn 1