Transistors IC SMD Type Silicon NPN Epitaxial 2SC4249 Features High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 3 V IC 20 mA Collector current Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 25 V, IE = 0 100 nA Emitter cut-off current IEBO VEB = 2 V, IC = 0 100 nA Collector-emitter breakdown voltage Testconditons V(BR)CEO IC = 1 mA, IB = 0 DC current gain hFE VCE = 10 V, IC = 2 mA Reverse transfer capacitance Cre VCB = 10 V, IE = 0, f = 1 MHz Transition frequency fT Power gain Gpe Noise figure NF AGC voltage VAGC VCE = 10 V, IC = 2 mA VCC = 12 V, VAGC = 1.4 V,f = 200 MHz VCC = 12 V, GR = 30dB, f = 200 MHz Min Typ 30 60 V 150 300 0.35 0.5 400 650 20 24 3.6 pF MHz 28 dB 2.0 3.2 dB 4.4 5.1 V Marking Marking HD www.kexin.com.cn 1