Transistors SMD Type Product specification 2SC4505 Features High breakdown voltage. (BVCEO = 400V) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 400 V collector-emitter voltage VCEO 400 V emitter-base voltage VEBO 7 V collector current IC CollectorPower Dissipation PC 0.1 A 0.2 A *1 0.5 W *2 2 W Junotion Temperature TJ 150 storage Temperature Tstg -55 to 150 *1 Single pulse pw=20ms,Duty=1/2 *2 When mounted on a 40X40X0.7 mm ceramic board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SC4505 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 400 Collector-emitter breakdown voltage BVCEO IC=1mA 400 V Emitter-base breakdown voltage BVEBO IE=50ìA 7 V V Collector cutoff current ICBO VCB=400V 10 ìA Emitter cutoff current IEBO VEB=6V 10 ìA 0.5 V 1.5 V Collector-emitter saturation voltage VCE(sat) IC/IB=10mA/1mA Base-emitter saturation voltage VBE(sat) IC/IB=10mA/1mA DC current transfer ratio hFE Transition frequency fT Output capacitance Turn-on time Storage time Fall time VCE=10V , IC=10mA 0.05 82 270 VCE=10V , IE=-10mA , f=10MHz 20 MHz Cob VCB=10V , IE=0A , f=1MHz 7 pF ton IC=-100mA RL=1.5kÙ 1 µs tstg IB1=-IB2=10mA 5.5 µs VCC=-150V 1.7 µs tf hFE Classification TYPE CEP CEQ Rank P Q Marking 82 to 180 120 to 270 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2