Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. (VCBO=12V) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO IC Collector current 12 V 0.15 A(DC) 0.2 A(Pulse)* W Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse Pw=100ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=10ìA 60 V Collector-emitter breakdown voltage BVCEO IC=1mA 50 V Emitter-base breakdown voltage BVEBO IE=10ìA 12 V Collector cutoff current ICBO VCB=50V 0.3 ìA Emitter cutoff current IEBO VEB=12V 0.3 ìA 0.3 V Collector-emitter saturation voltage VCE(sat) IC/IB=50mA/5mA DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE/IC=5V/1mA 820 2700 VCE=5V, IE=-10mA, f=100MHz 250 MHz VCB=5V, IE=0A, f=1MHz 3.5 pF hFE Classification Marking BJV BJW hFE 820 1800 1200 2700 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1