Transistors SMD Type Product specification 2SA1812 SOT-89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● High breakdown voltage. ● Low saturation voltage. 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter Voltage VCEO -400 V Emitter-base Voltae VEBO -7 V IC (DC) -0.5 A Collector current IC (Pulse) *1 -1 A PC 0.5 W PC *2 2 W Collector power dissipation Junction temperature TJ 150 ℃ Storage temperature TSTG -55 to 150 ℃ *1 Singte pulse *2 When mounted on a 40X40X0.7mm ceramic board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SA1812 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -400 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -400 V Emitter-base breakdown voltage V(BR)EBO IC=-50μA,IC=0 -7 V Collector cut-off current ICBO VCB=-400V -10 μA Emitter cut-off current IEBO VEB=-6V -10 μA hFE VCE=-5V, IC=-50mA DC current gain 82 270 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -1 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1.2 V Transition frequency fT Collector output capacitance Cob Turn-on time ton Storage time tstg Fall time VCE=-5V, IC=-50mA, f=5MHz 12 MHz VCB=-10V, IE=0, f=1MHz 18 pF 0.6 μs 2.7 μs 1 μs IC=-100mA,RL=1.5KΩ,IB1=-IB2=10mA,VCC=-150V tf ■ hFE Classification Marking AJP AJQ Rank P Q Range 82～180 120～270 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2